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SDUD02N70 Datasheet(PDF) 2 Page - SamHop Microelectronics Corp.

No. de pieza SDUD02N70
Descripción Electrónicos  Super high dense cell design for low RDS(ON)
PDF  11 Pages
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Fabricante Electrónico  SAMHOP [SamHop Microelectronics Corp.]
Página de inicio  http://www.samhop.com.tw
Logo SAMHOP - SamHop Microelectronics Corp.

SDUD02N70 Datasheet(HTML) 2 Page - SamHop Microelectronics Corp.

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background image
4 Symbol
Min
Typ
Max
Units
BVDSS
700
V
1
IGSS
±100
nA
VGS(th)
2
V
gFS
1.65
S
VSD
CISS
302
pF
COSS
36
pF
CRSS
7pF
Qg
16
nC
14.5
nC
Qgs
22
nC
Qgd
10.5
tD(ON)
ns
tr
1.5
ns
tD(OFF)
2.3
ns
tf
ns
Gate-Drain Charge
VDS=25V,VGS=0V
SWITCHING CHARACTERISTICS
Gate-Source Charge
VDD=350V
ID=1A
VGS=10V
RGEN=6 ohm
Total Gate Charge
Rise Time
Turn-Off Delay Time
VDS=350V,ID=1A,VGS=10V
Fall Time
Turn-On Delay Time
ohm
VGS=10V , ID=1A
VDS=20V , ID=1A
Input Capacitance
Output Capacitance
DYNAMIC CHARACTERISTICS
RDS(ON)
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
IDSS
uA
Gate Threshold Voltage
VDS=VGS , ID=250uA
VDS=560V , VGS=0V
VGS= ±30V , VDS=0V
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)
OFF CHARACTERISTICS
Parameter
Conditions
Drain-Source Breakdown Voltage
VGS=0V , ID=250uA
Reverse Transfer Capacitance
ON CHARACTERISTICS
4
6.3
b
f=1.0MHz
b
VDS=350V,ID=1A,
VGS=10V
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VGS=0V,IS=1A
0.8
V
Notes
www.samhop.com.tw
2
6.5
_
_
a.Pulse Test:Pulse Width < 300us, Duty Cycle < 2%.
b.Guaranteed by design, not subject to production testing.
c.Starting TJ=25°C,L=50mH,VDD = 50V.(See Figure13)
5
1.4
3
Ver 1.1
Dec,24,2013
SDU/D02N70



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