Motor de Búsqueda de Datasheet de Componentes Electrónicos
  Mexican  ▼
ALLDATASHEET.COM.MX

X  

Preview PDF HTML

SP2013 Datasheet(PDF) 2 Page - SamHop Microelectronics Corp.

No. de pieza SP2013
Descripción Electrónicos  Super high dense cell design for low RDS(ON).
PDF  8 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Fabricante Electrónico  SAMHOP [SamHop Microelectronics Corp.]
Página de inicio  http://www.samhop.com.tw
Logo SAMHOP - SamHop Microelectronics Corp.

SP2013 Datasheet(HTML) 2 Page - SamHop Microelectronics Corp.

  SP2013 Datasheet HTML 1Page - SamHop Microelectronics Corp. SP2013 Datasheet HTML 2Page - SamHop Microelectronics Corp. SP2013 Datasheet HTML 3Page - SamHop Microelectronics Corp. SP2013 Datasheet HTML 4Page - SamHop Microelectronics Corp. SP2013 Datasheet HTML 5Page - SamHop Microelectronics Corp. SP2013 Datasheet HTML 6Page - SamHop Microelectronics Corp. SP2013 Datasheet HTML 7Page - SamHop Microelectronics Corp. SP2013 Datasheet HTML 8Page - SamHop Microelectronics Corp.  
Zoom Inzoom in Zoom Outzoom out
 2 / 8 page
background image
Ver 1.1
Symbol
Min
Typ
Max
Units
BVDSS
-20
V
-1
IGSS
±100
nA
VGS(th)
-0.5
V
m ohm
VGS=-4.5V , ID=-4.25A
RDS(ON)
Drain-Source On-State Resistance
IDSS
uA
Gate Threshold Voltage
VDS=VGS , ID=-1.0mA
VDS=-16V , VGS=0V
VGS= ±12V , VDS=0V
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
OFF CHARACTERISTICS
Parameter
Conditions
Drain-Source Breakdown Voltage
VGS=0V , ID=-250uA
ON CHARACTERISTICS
SP2013
-0.9
-1.3
gFS
25
S
CISS
1860
pF
COSS
300
pF
CRSS
258
pF
Qg
39
nC
81
nC
Qgs
126
nC
Qgd
58
tD(ON)
23
ns
tr
1.8
ns
tD(OFF)
9.2
ns
tf
ns
Gate-Drain Charge
VDS=-10V,VGS=0V
SWITCHING CHARACTERISTICS
Gate-Source Charge
VDD=-16V
ID=-4.25A
VGS=-4.5V
RGEN= 6 ohm
Total Gate Charge
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
VDS=-10V , ID=-4.25A
Input Capacitance
Output Capacitance
DYNAMIC CHARACTERISTICS
Forward Transconductance
Reverse Transfer Capacitance
VGS=-4.0V , ID=-4.25A
m ohm
c
f=1.0MHz
c
VDS=-16V,ID=-8.5A,
VGS=-4.5V
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VSD
Diode Forward Voltage
VGS=0V,IS=-8.5A
-0.85
-1.2
V
Notes
a.Surface Mounted on FR4 Board,t < 10sec.
b.Pulse Test:Pulse Width < 300us, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
d.Drain current limited by maximum junction temperature.
_
_
www.samhop.com.tw
Jul,18,2013
2
_
16
20
16.5
21
VGS=-3.7V , ID=-4.25A
m ohm
VGS=-2.5V , ID=-4.25A
m ohm
22
28
12
12.5
18
VGS=-3.1V , ID=-4.25A
m ohm
19
25
14
17
22
13



Html Pages

1 2 3 4 5 6 7 8


Datasheet Descarga

Go To PDF Page


Enlace URL



¿ALLDATASHEET es útil para Ud.?  [ DONATE ] 

Todo acerca de Alldatasheet   |   Publicidad   |   Contáctenos   |   Política de Privacidad   |   Enlace a la hoja de datos    |   Intercambio de Enlaces   |   Lista de Fabricantes
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com