SP2102 datasheet(3/7 Pages) SAMHOP

No. de pieza	SP2102

Descripción Electrónicos	Super high dense cell design for low RDS(ON).

PDF	7 Pages

Scroll/Zoom	100%

Fabricante Electrónico	SAMHOP [SamHop Microelectronics Corp.]

Página de inicio	http://www.samhop.com.tw

Logo

3 / 7 page

SP2102

Ver 1.0

www.samhop.com.tw

Jan,03,2014

Tj( °

C )

VDS, Drain-to-Source Voltage(V)

Figure 1. Output Characteristics

VGS, Gate-to-Source Voltage(V)

Figure 2. Transfer Characteristics

ID, Drain Current(A)

Tj, Junction Temperature(° C )

Figure 3. On-Resistance vs. Drain Current

and Gate Voltage

Figure 4. On-Resistance Variation with Drain

Current and Temperature

Tj, Junction Temperature(° C )

Figure 5. Gate Threshold Variation

with Temperature

Tj, Junction Temperature(° C )

Figure 6. Breakdown Voltage Variation

with Temperature

0.5

1.0

1.5

2.0

2.5

3.0

8.0

6.4

4.8

3.2

1.6

0.9

5.4

4.5

3.6

2.7

1.8

-55 C

480

400

320

240

160

2.2

1.8

1.6

1.4

1.2

1.0

100

125

150

0.4

0.2

1.6

1.4

1.2

1.0

0.8

0.6

125 150

100

-25

-50

1.15

1.10

1.05

1.00

0.95

0.90

0.85

125 150

100

-25

-50

ID=250uA

V GS =10V

2.0

V GS =10V

ID=1A

VGS=5V

VGS=10V

0.1

V DS =V GS

ID=250uA

VGS=6V

25 C

Tj=125 C

VGS=3V

VGS=4V

VGS=7V

SP2102 Datasheet(PDF) 3 Page - SamHop Microelectronics Corp.

SP2102 Datasheet(HTML) 3 Page - SamHop Microelectronics Corp.

Html Pages

1 2 3 4 5 6 7

Datasheet Descarga

Enlace URL