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SP2103 Datasheet(PDF) 2 Page - SamHop Microelectronics Corp.

No. de pieza SP2103
Descripción Electrónicos  Super high dense cell design for low RDS(ON).
PDF  7 Pages
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Fabricante Electrónico  SAMHOP [SamHop Microelectronics Corp.]
Página de inicio  http://www.samhop.com.tw
Logo SAMHOP - SamHop Microelectronics Corp.

SP2103 Datasheet(HTML) 2 Page - SamHop Microelectronics Corp.

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background image
Symbol
Min
Typ
Max
Units
BVDSS
100
V
1
IGSS
±100
nA
VGS(th)
V
185
gFS
S
CISS
453
pF
COSS
34
pF
CRSS
23
pF
Qg
9.5
nC
10
18.3
6.5
tD(ON)
7.5
ns
tr
ns
tD(OFF)
ns
tf
ns
VDS=25V,VGS=0V
SWITCHING CHARACTERISTICS
VDD=50V
ID=1A
VGS=10V
RGEN= 6 ohm
Total Gate Charge
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
m ohm
VGS=10V , ID=1.1A
VDS=10V , ID=1.1A
Input Capacitance
Output Capacitance
DYNAMIC CHARACTERISTICS
RDS(ON)
Drain-Source On-State Resistance
Forward Transconductance
IDSS
uA
Gate Threshold Voltage
VDS=VGS , ID=250uA
VDS=80V , VGS=0V
VGS= ±20V , VDS=0V
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
OFF CHARACTERISTICS
Parameter
Conditions
Drain-Source Breakdown Voltage
VGS=0V , ID=250uA
Reverse Transfer Capacitance
ON CHARACTERISTICS
VGS=4.5V , ID=0.9A
220
220
350
m ohm
c
f=1.0MHz
c
SP2103
Ver 1.3
www.samhop.com.tw
Jul,18,2013
2
nC
Qgs
nC
Qgd
1
1.9
Gate-Drain Charge
Gate-Source Charge
VDS=50V,ID=1.1A,
VGS=10V
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
nC
4
VDS=50V,ID=1.1A,VGS=10V
VDS=50V,ID=1.1A,VGS=4.5V
VSD
Diode Forward Voltage
VGS=0V,IS=2A
0.83
1.2
V
Notes
a.Surface Mounted on FR4 Board,t < 10sec.
b.Pulse Test:Pulse Width < 300us, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
d.Starting TJ=25°C,L=0.5mH,VDD = 50V.(See Figure13)
_
_
_
1
1.5
1.9
3
634
48
41
19
20
37
13
10.5
1.4
2.7
5.6



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