SP2106 datasheet(1/7 Pages) SAMHOP

No. de pieza	SP2106

Descripción Electrónicos	Super high dense cell design for low RDS(ON).

PDF	7 Pages

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Fabricante Electrónico	SAMHOP [SamHop Microelectronics Corp.]

Página de inicio	http://www.samhop.com.tw

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1 / 7 page

Suface Mount Package.

S mHop Microelectronics C orp.

a

SP2106

Symbol

VDS

VGS

IDM

50

W

A

PD

°C

0.25

-55 to 150

ID

Units

Parameter

100

1

4.1

°C/W

V

±20

TA=25°C

Gate-Source Voltage

Drain-Source Voltage

THERMAL CHARACTERISTICS

PRODUCT SUMMARY

VDSS

ID

RDS(ON) (

Ω) Max

100V

1A

2.4

@

VGS=4.5V

2.0

@

VGS=10V

FEATURES

Super high dense cell design for low RDS(ON).

Rugged and reliable.

ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)

Limit

Drain Current-Continuous

a

-Pulsed

b

A

Maximum Power Dissipation

a

Operating Junction and Storage

Temperature Range

TJ, TSTG

Thermal Resistance, Junction-to-Ambient

R JA

Ver 1.1

www.samhop.com.tw

Jul,18,2013

1

Details are subject to change without notice.

TA=25°C

TA=70°C

A

TA=70°C

W

Dual N-Channel Enhancement Mode Field Effect Transistor

Green

Product

0.8

1.6

PIN1

EAS

Single Pulse Avalanche Energy

d

mJ

2.5

PDFN 5x6

ESD Protected.

4

3

2

1

D2

D1

G 2

S 2

G 1

S 1

5

6

7

8

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SP2106 Datasheet(PDF) 1 Page - SamHop Microelectronics Corp.

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