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STF443 Datasheet(PDF) 2 Page - SamHop Microelectronics Corp.

No. de pieza STF443
Descripción Electrónicos  Super high dense cell design for low RDS(ON).
PDF  6 Pages
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Fabricante Electrónico  SAMHOP [SamHop Microelectronics Corp.]
Página de inicio  http://www.samhop.com.tw
Logo SAMHOP - SamHop Microelectronics Corp.

STF443 Datasheet(HTML) 2 Page - SamHop Microelectronics Corp.

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background image
Symbol
Min
Typ
Max
Units
BVDSS
-20
V
-1
IGSS
±10
uA
VGS(th)
-0.5
V
m ohm
VGS=-4.5V , ID=-2.25A
RDS(ON)
Drain-Source On-State Resistance
IDSS
uA
Gate Threshold Voltage
VDS=VGS , ID=-1.0mA
VDS=-16V , VGS=0V
VGS= ±10V , VDS=0V
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
OFF CHARACTERISTICS
Parameter
Conditions
Drain-Source Breakdown Voltage
VGS=0V , ID=-250uA
ON CHARACTERISTICS
STF443
Ver 1.0
-0.75
-1.5
gFS
13
S
CISS
880
pF
COSS
174
pF
CRSS
134
pF
Qg
45
nC
82
nC
Qgs
225
nC
Qgd
148
tD(ON)
11.4
ns
tr
0.8
ns
tD(OFF)
4.6
ns
tf
ns
Gate-Drain Charge
VDS=-10V,VGS=0V
SWITCHING CHARACTERISTICS
Gate-Source Charge
VDD=-16V
ID=-2.25A
VGS=-4.5V
RGEN= 6 ohm
Total Gate Charge
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
VDS=-5V , ID=-2.25A
Input Capacitance
Output Capacitance
DYNAMIC CHARACTERISTICS
Forward Transconductance
Reverse Transfer Capacitance
VGS=-4.0V , ID=-2.25A
m ohm
c
f=1.0MHz
c
VDS=-16V,ID=-4.5A,
VGS=4.5V
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VSD
Diode Forward Voltage
VGS=0V,IS=-4.5A
-0.92
-1.2
V
Notes
a.Surface Mounted on FR4 Board,t < 10sec.
b.Pulse Test:Pulse Width < 10us, Duty Cycle < 1%.
c.Guaranteed by design, not subject to production testing.
d.Drain current limited by maximum junction temperature.
_
_
www.samhop.com.tw
Apr,26,2013
2
_
36
47
37
48
VGS=-3.7V , ID=-2.25A
m ohm
VGS=-2.5V , ID=-2.25A
m ohm
47
64
27
28
36
VGS=-3.1V , ID=-2.25A
m ohm
42
56
32
38
50
29



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