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STF445 Datasheet(PDF) 4 Page - SamHop Microelectronics Corp.

No. de pieza STF445
Descripción Electrónicos  Super high dense cell design for low RDS(ON).
PDF  6 Pages
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Fabricante Electrónico  SAMHOP [SamHop Microelectronics Corp.]
Página de inicio  http://www.samhop.com.tw
Logo SAMHOP - SamHop Microelectronics Corp.

STF445 Datasheet(HTML) 4 Page - SamHop Microelectronics Corp.

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STF445
Ver 1.0
www.samhop.com.tw
May,06,2013
4
0
0
4
8
1
0.8
0.6
0.4
0.2
-VDS - Drain to Source Voltage - V
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
VGS = -4.5 V
0.01
0
0.1
100
10
1
2.5
2
1.5
1
0.5
-VGS - Gate to Source Voltage - V
FORWARD TRANSFER CHARACTERISTICS
3
25
°C
75
°C
125
°C
TA = -25
°C
-50
0.7
1.0
0.9
0.8
150
100
50
0
Tch - Channel Temperature -
°C
GATEBTO SOURE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
ID = -1.0mA
0.01
0.01
0.1
100
10
1
100
10
1
0.1
-ID - Drain Current - A
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
1.1
TA = -25
°C
25
°C
75
°C
125
°C
0
15
60
45
30
100
10
1
0.1
-ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
VGS = 2.5 V
3.1 V
4.0 V
4.5 V
0
0
20
80
60
40
8
6
4
2
-VGS - Gate to Source Voltage - V
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
12
10
3.7 V
75
20
12
16
-4.0 V
-3.1 V
-3.7 V
-2.5 V
ID = -2.8 A



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