STK900 datasheet(3/7 Pages) SAMHOP

No. de pieza	STK900

Descripción Electrónicos	Super high dense cell design for low RDS(ON).

PDF	7 Pages

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Fabricante Electrónico	SAMHOP [SamHop Microelectronics Corp.]

Página de inicio	http://www.samhop.com.tw

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STK900

www.samhop.com.tw

Jun,22,2011

Figure 1. Output Characteristics

VDS, Drain-to-Source Voltage (V)

Figure 2. Transfer Characteristics

VGS, Gate-to-Source Voltage (V)

1.0

0.8

0.6

0.2

0.8

1.6

2.4

3.2

4.0

4.8

Tj=125 C

-55 C

0.4

25 C

ID, Drain Current (A)

3.0

2.5

2.0

1.5

1.0

0.5

0.3

0.6

0.9

1.2

1.5

0.1

Tj( C)

150

100

125

Tj, Junction Temperature ( C)

1.2

1.1

1.0

0.9

0.8

0.7

0.6

0.5

-50

-25

100 125 150

Figure 5. Gate Threshold Variation

with Temperature

Figure 6. Breakdown Voltage Variation

with Temperature

Tj, Junction Temperature ( C)

-50

-25

100 125 150

1.3

1.2

1.1

1.0

0.9

0.8

0.7

Drain Current and Temperature

Figure 4. On-Resistance Variation with

and Gate Voltage

Figure 3. On-Resistance vs. Drain Current

Ver 1.0

1.00

0.75

0.50

0.25

1.0

2.0

3.0

4.0

5.0

1.25

VGS =10V

VGS = 4.5V

VGS=10V

ID=0.5A

VGS=4.5V

ID=0.5A

1.50

0.8

1.6

1.2

2.0

1.8

1.4

1.0

VDS =VGS

ID =250uA

ID = 250uA

VGS =3V

VGS =3.5V

VGS =4V

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