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STS8213 Datasheet(PDF) 2 Page - SamHop Microelectronics Corp.

No. de pieza STS8213
Descripción Electrónicos  Super high dense cell design for low RDS(ON).
PDF  7 Pages
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Fabricante Electrónico  SAMHOP [SamHop Microelectronics Corp.]
Página de inicio  http://www.samhop.com.tw
Logo SAMHOP - SamHop Microelectronics Corp.

STS8213 Datasheet(HTML) 2 Page - SamHop Microelectronics Corp.

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ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
STS8213
Ver 1.0
www.samhop.com.tw
Jan,02,2013
2
Symbol
Min
Typ
Max
Units
BVDSS
20
V
1
IGSS
±10
uA
VGS(th)
0.5
V
RDS(ON)
Drain-Source On-State Resistance
IDSS
uA
Gate Threshold Voltage
VDS=VGS , ID=1mA
VDS=16V , VGS=0V
VGS= ±12V , VDS=0V
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
OFF CHARACTERISTICS
Parameter
Conditions
Drain-Source Breakdown Voltage
VGS=0V , ID=250uA
ON CHARACTERISTICS
0.9
1.5
gFS
22
S
VSD
CISS
573
pF
COSS
172
pF
CRSS
130
pF
Qg
17
nC
41
nC
Qgs
35
nC
Qgd
53
tD(ON)
9.5
ns
tr
2.2
ns
tD(OFF)
5.8
ns
tf
ns
Gate-Drain Charge
VDS=10V,VGS=0V
SWITCHING CHARACTERISTICS
Gate-Source Charge
VDD=16V
ID=3.5A
VGS=4V
RGEN= 6 ohm
Total Gate Charge
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
VDS=5V , ID=3.5A
Input Capacitance
Output Capacitance
DYNAMIC CHARACTERISTICS
Forward Transconductance
Diode Forward Voltage
Reverse Transfer Capacitance
VGS=2.5V , ID=3.5A
m ohm
c
f=1.0MHz
c
VDS=16V,ID=7A,
VGS=4V
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VGS=0V,IS=7A
0.86
1.2
V
Notes
a.Surface Mounted on FR4 Board,t < 10sec.
b.Pulse Test:Pulse Width < 10us, Duty Cycle < 1%.
c.Guaranteed by design, not subject to production testing.
_
_
_
16.0
22
VGS=3.1V , ID=3.5A
m ohm
13.5
18.0
m ohm
VGS=4.0V , ID=3.5A
12.0
16.0
m ohm
VGS=3.7V , ID=3.5A
12.5
16.5
12.0
10.0
9.0
9.5



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