STUD03L01 datasheet(3/10 Pages) SAMHOP

No. de pieza	STUD03L01

Descripción Electrónicos	Super high dense cell design for low RDS(ON).

PDF	10 Pages

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Fabricante Electrónico	SAMHOP [SamHop Microelectronics Corp.]

Página de inicio	http://www.samhop.com.tw

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3 / 10 page

STU03L01

STD03L01

Ver 1.0

www.samhop.com.tw

Jul,03,2013

Tj( °

C )

VDS, Drain-to-Source Voltage(V)

Figure 1. Output Characteristics

VGS, Gate-to-Source Voltage(V)

Figure 2. Transfer Characteristics

ID, Drain Current(A)

Tj, Junction Temperature(° C )

Figure 3. On-Resistance vs. Drain Current

and Gate Voltage

Figure 4. On-Resistance Variation with Drain

Current and Temperature

Tj, Junction Temperature(° C )

Figure 5. Gate Threshold Variation

with Temperature

Tj, Junction Temperature(° C )

Figure 6. Breakdown Voltage Variation

with Temperature

2.5

1.5

1.0

0.5

1.5

2.5

VGS=10V

2.5

2.0

1.5

1.0

0.5

0.8

4.8

4.0

3.2

2.4

1.6

Tj=125 C

-55 C

25 C

1.8

1.5

1.2

0.9

0.6

0.3

2.25

2.00

1.75

1.50

1.25

1.00

100

125

150

V GS =10V

ID=1A

0.4

0.2

1.6

1.4

1.2

1.0

0.8

0.6

125 150

100

-25

-50

V DS =V GS

ID=250uA

1.15

1.10

1.05

1.00

0.95

0.90

0.85

125 150

100

-25

-50

ID=250uA

0.5

V GS =10V

VGS=4.5V

0.01

0.5

1.5

2.0

2.5

2.0

V GS =4.5V

ID=0.9A

VGS=4V

VGS=3.5V

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