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STUD35L01 Datasheet(PDF) 2 Page - SamHop Microelectronics Corp.

No. de pieza STUD35L01
Descripción Electrónicos  Super high dense cell design for low RDS(ON).
PDF  8 Pages
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Fabricante Electrónico  SAMHOP [SamHop Microelectronics Corp.]
Página de inicio  http://www.samhop.com.tw
Logo SAMHOP - SamHop Microelectronics Corp.

STUD35L01 Datasheet(HTML) 2 Page - SamHop Microelectronics Corp.

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background image
Symbol
Min
Typ
Max
Units
BVDSS
100
V
1
IGSS
±100
nA
VGS(th)
V
24
gFS
S
CISS
2600
pF
COSS
203
pF
CRSS
123
pF
Qg
63
nC
62
64
22
tD(ON)
36
ns
tr
ns
tD(OFF)
ns
tf
ns
VDS=25V,VGS=0V
SWITCHING CHARACTERISTICS
VDD=50V
ID=1A
VGS=10V
RGEN=6ohm
Total Gate Charge
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
m ohm
VGS=10V , ID=15A
VDS=20V , ID=15A
Input Capacitance
Output Capacitance
DYNAMIC CHARACTERISTICS
RDS(ON)
Drain-Source On-State Resistance
Forward Transconductance
IDSS
uA
Gate Threshold Voltage
VDS=VGS ,ID=250uA
VDS=80V , VGS=0V
VGS=±20V,VDS=0V
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)
OFF CHARACTERISTICS
Parameter
Conditions
Drain-Source Breakdown Voltage
VGS=0V , ID=250uA
Reverse Transfer Capacitance
ON CHARACTERISTICS
31
c
f=1.0MHz
c
STU/D35L01
Ver 2.1
www.samhop.com.tw
Oct,29,2010
2
VSD
nC
Qgs
nC
Qgd
6.3
14
Gate-Drain Charge
Gate-Source Charge
Diode Forward Voltage
VDS=50V,ID=15A,
VGS=10V
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VGS=0V,IS=8A
0.79
1.3
V
Notes
VDS=50V,ID=15A,VGS=10V
a.Surface Mounted on FR4 Board,t < 10sec.
b.Pulse Test:Pulse Width < 300us, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
d.Starting TJ=25°C,L=5mH,VDD = 80V.(See Figure13)
_
_
_
2
2.8
4
23
e.Pulse Test:Pulse Width < 1us,Duty Cycle < 1%.
BVDSS
105
V
Drain-Source Breakdown Voltage
VGS=0V , ID=10mA
e



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