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STUD320S Datasheet(PDF) 2 Page - SamHop Microelectronics Corp.

No. de pieza STUD320S
Descripción Electrónicos  Super high dense cell design for low RDS(ON).
PDF  8 Pages
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Fabricante Electrónico  SAMHOP [SamHop Microelectronics Corp.]
Página de inicio  http://www.samhop.com.tw
Logo SAMHOP - SamHop Microelectronics Corp.

STUD320S Datasheet(HTML) 2 Page - SamHop Microelectronics Corp.

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Symbol
Min
Typ
Max
Units
BVDSS
30
V
1
IGSS
±10
uA
VGS(th)
1
V
16
gFS
12
S
VSD
CISS
430
pF
COSS
140
pF
CRSS
88
pF
Qg
8
nC
13
nC
Qgs
16
nC
Qgd
30
tD(ON)
8
ns
tr
0.9
ns
tD(OFF)
2.5
ns
tf
ns
Gate-Drain Charge
VDS=15V,VGS=0V
SWITCHING CHARACTERISTICS
Gate-Source Charge
VDD=15V
ID=1A
VGS=10V
RGEN=6 ohm
Total Gate Charge
Rise Time
Turn-Off DelayTime
VDS=15V,ID=15A,VGS=10V
Fall Time
Turn-On DelayTime
m ohm
VGS=10V , ID=15A
VDS=10V , ID=15A
Input Capacitance
Output Capacitance
DYNAMIC CHARACTERISTICS
RDS(ON)
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
IDSS
A
Gate Threshold Voltage
VDS=VGS ,ID=250uA
VDS=24V , VGS=0V
VGS=±20V,VDS=0V
Zero Gate Voltage Drain Current
Gate-Body leakage current
ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)
OFF CHARACTERISTICS
Parameter
Conditions
Drain-Source Breakdown Voltage
VGS=0V,ID=250uA
Reverse Transfer Capacitance
ON CHARACTERISTICS
3
VGS=4.5V , ID=12.5A
20
22
29
m ohm
c
f=1.0MHz
c
VDS=15V,ID=15A,
VGS=10V
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VGS=0V,IS=2.2A
0.8
1.3
V
Notes
a.Surface Mounted on FR4 Board,t<10 sec.
b.Pulse Test:Pulse Width < 300us, Duty Ctcle < 2%.
c.Guaranteed by design, not subject to production testing.
d.Starting TJ=25°C,L=0.5mH,RG=25
Ω,VDD=30V,VGS=10V .(See Figure13)
e.Package current limitation is 20A.
_
_
STU/D320S
Ver 1.0
www.samhop.com.tw
Aug,11,2008
2
IS
Maximum Continuous Drain-Source Diode Forward Current
2.2
A
1.8
VDS=15V,ID=15A,VGS=4.5V
4
nC
_
b



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