STUD334S datasheet(1/8 Pages) SAMHOP

No. de pieza	STUD334S

Descripción Electrónicos	Super high dense cell design for low RDS(ON).

PDF	8 Pages

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Fabricante Electrónico	SAMHOP [SamHop Microelectronics Corp.]

Página de inicio	http://www.samhop.com.tw

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S mHop Microelectronics C orp.

a

STU/D334S

Symbol

VDS

VGS

IDM

A

ID

Units

Parameter

30

V

±20

Gate-Source Voltage

Drain-Source Voltage

PRODUCT SUMMARY

VDSS

ID

RDS(ON) (m ) Max

30V

60A

6.8

@

VGS=4.5V

4.7

@

VGS=10V

FEATURES

Super high dense cell design for low RDS(ON).

Rugged and reliable.

TO-252 and TO-251 Package.

N-Channel Logic Level Enhancement Mode Field Effect Transistor

ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)

Limit

Drain Current-Continuous

-Pulsed

a

A

Ver 1.0

www.samhop.com.tw

Jul,19,2012

1

Details are subject to change without notice.

TC=25°C

G

S

D

G

S

STU SERIES

TO - 252AA( D- PAK )

STD SERIES

TO - 251( I - PAK )

W

PD

°C

-55 to 150

TC=25°C

THERMAL CHARACTERISTICS

Maximum Power Dissipation

Operating Junction and Storage

Temperature Range

TJ, TSTG

50

°C/W

Thermal Resistance, Junction-to-Ambient

R JA

3

°C/W

Thermal Resistance, Junction-to-Case

R JC

TC=70°C

A

EAS

mJ

Single Pulse Avalanche Energy

c

TC=70°C

W

60

176

42

Gre

rr

P

Pr

P

P o

rr

48

27

64

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STUD334S Datasheet(PDF) 1 Page - SamHop Microelectronics Corp.

STUD334S Datasheet(HTML) 1 Page - SamHop Microelectronics Corp.

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