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STUD435S Datasheet(PDF) 2 Page - SamHop Microelectronics Corp.

No. de pieza STUD435S
Descripción Electrónicos  Super high dense cell design for low RDS(ON).
PDF  8 Pages
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Fabricante Electrónico  SAMHOP [SamHop Microelectronics Corp.]
Página de inicio  http://www.samhop.com.tw
Logo SAMHOP - SamHop Microelectronics Corp.

STUD435S Datasheet(HTML) 2 Page - SamHop Microelectronics Corp.

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Symbol
Min
Typ
Max
Units
BVDSS
-40
V
1
IGSS
±100
nA
VGS(th)
-1
V
14
gFS
36
S
VSD
CISS
1950
pF
COSS
229
pF
CRSS
186
pF
Qg
24
nC
38
nC
Qgs
11
nC
Qgd
8
tD(ON)
42
ns
tr
3.4
ns
tD(OFF)
11
ns
tf
ns
Gate-Drain Charge
VDS=-20V,VGS=0V
SWITCHING CHARACTERISTICS
Gate-Source Charge
VDD=-20V
ID=-1A
VGS=-10V
RGEN=6ohm
Total Gate Charge
Rise Time
Turn-Off Delay Time
VDS=-20V,ID=-19A,VGS=-10V
Fall Time
Turn-On Delay Time
m ohm
VGS=-10V , ID=-19A
VDS=-10V , ID=-19A
Input Capacitance
Output Capacitance
DYNAMIC CHARACTERISTICS
RDS(ON)
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
IDSS
uA
Gate Threshold Voltage
VDS=VGS ,ID=-250uA
VDS=-32V , VGS=0V
VGS=±20V,VDS=0V
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)
OFF CHARACTERISTICS
Parameter
Conditions
Drain-Source Breakdown Voltage
VGS=0V,ID=-250uA
Reverse Transfer Capacitance
ON CHARACTERISTICS
VGS=-4.5V , ID=-15A
17.5
20
27
m ohm
f=1.0MHz
VDS=-20V,ID=-19A,
VGS=-10V
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VGS=0V,IS= -4A
-0.78
-1.3
V
Notes
a.Pulse Test:Pulse Width < 300us, Duty Cycle < 2%.
b.Guaranteed by design, not subject to production testing.
c.Starting TJ=25°C,L=0.5mH,VDD = 20V .(See Figure13)
STU/D435S
www.samhop.com.tw
Jul,01,2011
2
nC
VDS=-20V,ID=-19A,VGS=-4.5V
20
_
_
b
-1.7
-3
b
Ver 1.0



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