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STUD610S Datasheet(PDF) 2 Page - SamHop Microelectronics Corp.

No. de pieza STUD610S
Descripción Electrónicos  Super high dense cell design for low RDS(ON).
PDF  8 Pages
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Fabricante Electrónico  SAMHOP [SamHop Microelectronics Corp.]
Página de inicio  http://www.samhop.com.tw
Logo SAMHOP - SamHop Microelectronics Corp.

STUD610S Datasheet(HTML) 2 Page - SamHop Microelectronics Corp.

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Symbol
Min
Typ
Max
Units
BVDSS
60
V
1
IGSS
±100
nA
VGS(th)
V
185
m ohm
VGS=10V , ID=9.5A
RDS(ON)
Drain-Source On-State Resistance
IDSS
uA
Gate Threshold Voltage
VDS=VGS ,ID=250uA
VDS=48V , VGS=0V
VGS=±20V,VDS=0V
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
OFF CHARACTERISTICS
Parameter
Conditions
Drain-Source Breakdown Voltage
VGS=0V , ID=250uA
ON CHARACTERISTICS
240
STU/D610S
www.samhop.com.tw
Apr,30,2010
2
23
4
gFS
S
CISS
348
pF
COSS
34.5
pF
CRSS
17
pF
Qg
10.5
nC
8.5
15.8
4.3
tD(ON)
4.7
ns
tr
ns
tD(OFF)
ns
tf
ns
VDS=25V,VGS=0V
SWITCHING CHARACTERISTICS
VDD=30V
ID=1A
VGS=10V
RGEN=6ohm
Total Gate Charge
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
VDS=10V , ID=9.5A
Input Capacitance
Output Capacitance
DYNAMIC CHARACTERISTICS
Forward Transconductance
Reverse Transfer Capacitance
c
f=1.0MHz
c
VDS=30V,ID=9.5A,VGS=10V
nC
Qgs
nC
Qgd
1.3
1.3
Gate-Drain Charge
Gate-Source Charge
VDS=30V,ID=9.5A,
VGS=10V
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VSD
Diode Forward Voltage
VGS=0V,IS=1A
0.8
1.3
V
Notes
b
a.Surface Mounted on FR4 Board,t < 10sec.
b.Pulse Test:Pulse Width < 300us, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
d.Starting TJ=25°C,L=0.5mH,VDD = 30V.(See Figure13)
_
_
_
12.8
Ver 1.0



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