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STUD628S Datasheet(PDF) 2 Page - SamHop Microelectronics Corp.

No. de pieza STUD628S
Descripción Electrónicos  Super high dense cell design for low RDS(ON).
PDF  10 Pages
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Fabricante Electrónico  SAMHOP [SamHop Microelectronics Corp.]
Página de inicio  http://www.samhop.com.tw
Logo SAMHOP - SamHop Microelectronics Corp.

STUD628S Datasheet(HTML) 2 Page - SamHop Microelectronics Corp.

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background image
Symbol
Min
Typ
Max
Units
BVDSS
60
V
1
IGSS
±100
nA
VGS(th)
V
gFS
S
CISS
2470
pF
COSS
162
pF
CRSS
128
pF
40
31
77
34
tD(ON)
ns
tr
ns
tD(OFF)
ns
tf
ns
VDS=25V,VGS=0V
SWITCHING CHARACTERISTICS
VDD=30V
ID=1A
VGS=10V
RGEN=6ohm
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
VDS=10V , ID=20A
Input Capacitance
Output Capacitance
DYNAMIC CHARACTERISTICS
Forward Transconductance
IDSS
uA
Gate Threshold Voltage
VDS=VGS ,ID=250uA
VDS=48V , VGS=0V
VGS=±20V,VDS=0V
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)
OFF CHARACTERISTICS
Parameter
Conditions
Drain-Source Breakdown Voltage
VGS=0V , ID=250uA
Reverse Transfer Capacitance
ON CHARACTERISTICS
b
f=1.0MHz
b
www.samhop.com.tw
2
VSD
nC
Qgs
nC
Qgd
3.6
8.4
Gate-Drain Charge
Gate-Source Charge
Diode Forward Voltage
VDS=30V,ID=20A,
VGS=10V
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VGS=0V,IS=2A
0.77
1.3
V
1
1.7
3
60
Dec,23,2014
Ver 1.0
STU628S
STD628S
10
m ohm
VGS=10V , ID=20A
RDS(ON)
Drain-Source On-State Resistance
12.5
12
mohm
VGS=4.5V , ID=18A
16
Qg
nC
32
Total Gate Charge
VDS=30V,ID=20A,VGS=10V
nC
VDS=30V,ID=20A,VGS=4.5V
15
Notes
a.Pulse Test:Pulse Width < 10us, Duty Cycle < 1%.
b.Guaranteed by design, not subject to production testing.
c.Drain current limited by maximum junction temperature.
d.Starting TJ=25°C,L=0.5mH,VDD = 30V.(See Figure13)
e.Mounted on FR4 Board of 1 inch2 , 2oz.
_
_



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