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STUD816S Datasheet(PDF) 3 Page - SamHop Microelectronics Corp.

No. de pieza STUD816S
Descripción Electrónicos  Super high dense cell design for low RDS(ON).
PDF  8 Pages
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Fabricante Electrónico  SAMHOP [SamHop Microelectronics Corp.]
Página de inicio  http://www.samhop.com.tw
Logo SAMHOP - SamHop Microelectronics Corp.

STUD816S Datasheet(HTML) 3 Page - SamHop Microelectronics Corp.

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STU/D816S
Ver 1.0
www.samhop.com.tw
May,12,2011
3
Tj( °
C)
VDS, Drain-to-Source Voltage(V)
Figure 1. Output Characteristics
VGS, Gate-to-Source Voltage(V)
Figure 2. Transfer Characteristics
ID, Drain Current(A)
Tj, Junction Temperature(° C)
Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
Figure 4. On-Resistance Variation with Drain
Current and Temperature
Tj, Junction Temperature(° C)
Figure 5. Gate Threshold Variation
with Temperature
Tj, Junction Temperature(° C)
Figure 6. Breakdown Voltage Variation
with Temperature
25
20
15
10
0
0
0.5
1.0
1.5
2.0
2.5
3.0
VGS=10V
25
20
15
10
5
0
0
1
6
5
4
3
2
Tj=125 C
-55 C
25 C
120
100
80
60
40
20
1
2.5
2.2
1.9
1.6
1.3
1.0
0
100
75
25
50
125
150
V GS =10V
ID=10A
0.4
1.6
1.4
1.2
1.0
0.8
0.6
125 150
100
75
50
25
0
-25
-50
V DS =V GS
ID=250uA
1.15
1.10
1.05
1.00
0.95
0.90
0.85
125 150
100
75
50
25
0
-25
-50
ID=250uA
5
V GS =10V
VGS=3.5V
VGS=4V
VGS=5V
15
10
15
20
25
0
VGS=4.5V
V GS =4.5V
V GS =4.5V
ID=8.25A
0.2



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