KTA1663_15 datasheet(1/2 Pages) KEC

No. de pieza	KTA1663

Descripción Electrónicos	EPITAXIAL PLANAR PNP TRANSISTOR

PDF	2 Pages

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Fabricante Electrónico	KEC [KEC(Korea Electronics)]

Página de inicio	http://www.keccorp.com

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1 / 2 page

2002. 5. 14

1/2

SEMICONDUCTOR

TECHNICAL DATA

KTA1663

EPITAXIAL PLANAR PNP TRANSISTOR

Revision No : 3

HIGH CURRENT APPLICATION.

FEATURES

・1W (Mounted on Ceramic Substrate).

・Small Flat Package.

・Complementary to KTC4375.

MAXIMUM RATING (Ta=25℃)

DIM

A

B

D

E

G

H

K

4.70 MAX

2.50 0.20

1.70 MAX

0.45+0.15/-0.10

4.25 MAX

1.50 0.10

0.40 TYP

1.75 MAX

0.75 MIN

0.5+0.10/-0.05

SOT-89

C

J

G

D

1

2

3

2. COLLECTOR (HEAT SINK)

A

C

K

F

MILLIMETERS

H

1. BASE

3. EMITTER

F

D

+_

ELECTRICAL CHARACTERISTICS (Ta=25℃)

Note : hFE Classification O:100～200, Y:160～320

PC* : KTA1663 mounted on ceramic substrate (250mm2x0.8t)

Type Name

h

Rank

FE

Lot No.

Marking

CHARACTERISTIC

SYMBOL

RATING

UNIT

Collector-Base Voltage

VCBO

-30

V

Collector-Emitter Voltage

VCEO

-30

V

Emitter-Base Voltage

VEBO

-5

V

Collector Current

IC

-1.5

A

Base Current

IB

-0.3

A

Collector Power Dissipation

PC

500

mW

PC*

1

W

Junction Temperature

Tj

150

℃

Storage Temperature Range

Tstg

-55～150

℃

CHARACTERISTIC

SYMBOL

TEST CONDITION

MIN.

TYP.

MAX.

UNIT

Collector Cut-off Current

ICBO

VCB=-30V, IE=0

-

-100

nA

Emitter Cut-off Current

IEBO

VEB=-5V, IC=0

-

-100

nA

Collector-Emitter Breakdown Voltage

V(BR)CEO

IC=-10mA, IB=0

-30

-

V

Emitter-Base Breakdown Voltage

V(BR)EBO

IE=-1mA, IC=0

-5.0

-

V

DC Current Gain

hFE (Note)

VCE=-2V, IC=-500mA

100

-

320

Collector-Emitter Saturation Voltage

VCE(sat)

IC=-1.5A, IB=-0.03A

-

-2.0

V

Base-Emitter Voltage

VBE

VCE=-2V, IC=-500mA

-

-1.0

V

Transition Frequency

fT

VCE=-2V, IC=-500mA

-

120

-

MHz

Collector Output Capacitance

Cob

VCB=-10V, IE=0, f=1MHz

-

50

pF

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