Features

1 of 6

Optimum Technology

Matching® Applied

GaAs HBT

InGaP HBT

GaAs MESFET

SiGe BiCMOS

Si BiCMOS

SiGe HBT

GaAs pHEMT

Si CMOS

Si BJT

GaN HEMT

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Product Description

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

InP HBT

LDMOS

RF MEMS

SGC-6489Z

50MHz to 3500MHz SILICON GERMANIUM

ACTIVE BIAS GAIN BLOCK

RFMD’s SGC-6489Z is a high performance SiGe HBT MMIC amplifier utiliz-

ing a Darlington configuration with an active bias network. The active bias

network provides stable current over temperature and process Beta varia-

tions. Designed to run directly from a 5V supply, the SGC-6489Z does not

require a dropping resistor as compared to traditional Darlington amplifi-

ers. The SGC-6489Z product is designed for high linearity 5V gain block

applications that require small size and minimal external components. It is

internally matched to 50

.

Gain and Return Loss

-40.0

-30.0

-20.0

-10.0

0.0

10.0

20.0

30.0

0.00.5

1.01.5

2.02.5

3.03.5

Frequency (GHz)

S11

S21

S22



Single Supply Operation: 5V



No Dropping Resistor

Required



Patented Self Bias Circuitry



Gain = 19.5dBm at 1950MHz



P1dB = 19.2dBm at

1950MHz



IP3 = 32.8dBm at 1950MHz



Robust 1000V ESD, Class 1C

HBM

Applications



PA Driver Amplifier



Cellular, PCS, GSM, UMTS



IF Amplifier



Wireless Data, Satellite

DS120409

NOT FOR NEW DESIGNS



Package: SOT-89

SGC-6489Z

50MHz to

3500MHz Sili-

con Germa-

nium Active

Bias Gain

Block

Parameter

Specification

Unit

Condition

Min.

Typ.

Max.

Small Signal Gain

20.7

22.2

23.7

dB

850MHz

18.0

19.5

21.0

dB

1950MHz

18.3

dB

2400MHz

Output Power at 1dB Compression

20.6

dBm

850MHz

17.7

19.2

dBm

1950MHz

18.4

dBm

2400MHz

Output Third Order Intercept Point

34.1

dBm

850MHz

30.8

32.8

dBm

1950MHz

31.4

dBm

2400MHz

Input Return Loss

14

18

dB

1950MHz

Output Return Loss

8

11

dB

1950MHz

Noise Figure

2.4

3.4

dB

1930MHz

Device Operating Voltage

5

V

Device Operating Current

70

82

94

mA

Thermal Resistance

70

°C/W

junction to lead