P4C1981/1981L, P4C1982/1982L

Page 3 of 13

Document # SRAM114 REV B

DATA RETENTION CHARACTERISTICS (P4C1981L/P4C1982L Military Temperature Only)

Typ.*

Max

Symbol

Parameter

Test Condition

Min

V

Unit

2.0V

3.0V

2.0V

3.0V

V

DR

V

2.0

V

I

CCDR

Data Retention Current

10

15

600

900

µA

t

CDR

Chip Deselect to

CE

0

ns

Data Retention Time

V

t

R

†

Operation Recovery Time

t

RC

§

ns

Notes:

1. Stresses greater than those listed under MAXIMUM RATINGS may

cause permanent damage to the device. This is a stress rating only

and functional operation of the device at these or any other conditions

above those indicated in the operational sections of this specification

is not implied. Exposure to MAXIMUM ratingconditions for extended

periods may affect reliability.

2. Extended temperature operation guaranteed with 400 linear feet per

minute of air flow.

3. Transient inputs with V

–100mA, respectively, are permissible for pulse widths up to 20 ns.

4. This parameter is sampled and not 100% tested.

*V

CE

I

CC

Symbol

Parameter

Temperature

Range

Dynamic Operating Current*

Commercial

Industrial

Military

–10

N/A

–12

–15

–20

–25

–35

–45

Unit

N/A

mA

mA

mA

POWER DISSIPATION CHARACTERISTICS VS. SPEED

N/A

150

155

160

170

180

N/A

170

160

155

150

145

180

170

160

155

150

N/A

N/A

V

DATA RETENTION WAVEFORM