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MS67C10 Datasheet(PDF) 1 Page - Bruckewell Technology LTD |
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MS67C10 Datasheet(HTML) 1 Page - Bruckewell Technology LTD |
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1 / 7 page ![]() MS67C10 N & P Channel 60-V Dual MOSFETs Publication Order Number: [MS67C10] © Bruckewell Technology Corporation Rev. A -2014 Description These N+P dual Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. Features • Fast switching • Green Device Available • Suit for 4.5V Gate Drive Applications Applications • DC Fan • Motor Drive Applications • Networking • Half / Full Bridge Topology Packing & Order Information 3,000/Reel Graphic symbol SO-8 Package information |
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