UMD6N

Dual NPN+PNP Digital Transistors

(Built-in Resistors)

Elektronische Bauelemente

30-Jun-2010 Rev. A

Page 1 of 2

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

FEATURES



DTA143T(PNP) and DTC143T(NPN) transistors

are built-in a package.



Transistor elements are independent, eliminating

interference.



Mounting cost and area can be cut in half.

EQUIVALENT CIRCUIT

MARKING：D6

ABSOLUTE MAXIMUM RATINGS at Ta = 25°C

Parameter

Symbol

Value

Unit

Collector-base voltage

50

V

Collector-emitter voltage

50

V

Emitter-base voltage

5

V

Collector current

100

mA

Collector Power dissipation

150

mW

Junction & Storage temperature

150, -55 ~ 150

℃

ABSOLUTE MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS at Ta = 25°C

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Collector-base breakdown voltage

50

-

-

V

Collector-emitter breakdown voltage

50

-

-

Emitter-base breakdown voltage

5

-

-

V

Collector cut-off current

-

-

0.5

A

Emitter cut-off current

-

-

0.5

A

Collector-emitter saturation voltage

-

-

0.3

V

DC current transfer ratio

100

-

600

Input resistance

3.29

4.7

6.11

K



Transition frequency

-

250

-

MHz

f=100MHz



REF.

Millimeter

REF.

Millimeter

Min.

Max.

Min.

Max.

A

2.00

2.20

G

0.100 REF.

B

2.15

2.45

H

0.525 REF.

C

1.15

1.35

J

0.08

0.15

D

0.90

1.10

K

8°

E

1.20

1.40

L

0.650 TYP.

F

0.15

0.35

SOT-363

B

L

F

H

C

J

D G

K

A

E