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ICS571 Datasheet(PDF) 5 Page - Integrated Device Technology

No. de pieza ICS571
Descripción Electrónicos  Packaged in 8-pin SOIC
PDF  7 Pages
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Fabricante Electrónico  IDT [Integrated Device Technology]
Página de inicio  http://www.idt.com
Logo IDT - Integrated Device Technology

ICS571 Datasheet(HTML) 5 Page - Integrated Device Technology

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ICS571
LOW PHASE NOISE ZERO DELAY BUFFER
ZDB AND MULTIPLIER/DIVIDER
IDT™ / ICS™ LOW PHASE NOISE ZERO DELAY BUFFER
5
ICS571
REV H 051310
AC Electrical Characteristics
Unless stated otherwise, VDD = 5.0 V or 3.3 V, Ambient Temperature 0 to +70
° C
Notes:
1. Sresses beyond these can permanently damage the device.
2. Assumes clocks with the same rise time, measured from rising edges at VDD/2. Measured with 33
Ω termination
resistors and 15 pF loads. Applies to both 3.3 V and 5 V operation.
3. CLK/2 has lower jitter (both absolute and one sigma, in ps) than CLK.
Thermal Characteristics
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Units
Input Frequency, clock input
fIN
FB from CLK
20
160
MHz
Input Frequency, clock input
fIN
FB from CLK/2
10
80
MHz
Skew CLK/2 with respect to CLK
Note 2
150
500
850
ps
Input clock to output connected to FBIN
Note 2
-500
500
ps
Output Clock Rise Time, 5 V
0.8 to 2.0 V, 15 pF load
0.3
ns
Output Clock Fall Time, 5 V
2.0 to 0.8 V, 15 pF load
0.4
ns
Output Clock Rise Time, 3.3 V
0.8 to 2.0 V, 15 pF load
0.45
ns
Output Clock Fall Time, 3.3 V
2.0 to 0.8 V, 15 pF load
0.55
ns
Input Clock Duty Cycle, 3.3 V
fin = 150 MHz
20
80
%
Output Clock Duty Cycle, 3.3 V
At VDD/2
45
49 to 51
55
%
Absolute Clock Period Jitter, CLK,
Note 3
Deviation from Mean
±80
ps
One-Sigma Clock Period Jitter, CLK,
Note 3
50
ps
Phase Noise, Relative to carrier
1 kHz offset
-105
dBc/Hz
Phase Noise, Relative to carrier
100 kHz offset
-115
dBc/Hz
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Units
Thermal Resistance Junction to
Ambient
θJA
Still air
° C/W
θJA
1 m/s air flow
° C/W
θJA
3 m/s air flow
° C/W
Thermal Resistance Junction to Case
θJC
° C/W



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