BLF177_15 datasheet(6/20 Pages) JMNIC

6 / 20 page

1998 Jul 02

Philips Semiconductors

Product speciﬁcation

HF/VHF power MOS transistor

BLF177

APPLICATION INFORMATION FOR CLASS-AB OPERATION

RF performance in SSB operation in a common source class-AB test circuit (see Fig.13).

Th =25 °C; Rth mb-h = 0.2 K/W; ZL = 6.25 + j0 Ω; f1 = 28.000 MHz; f2 = 28.001 MHz unless otherwise speciﬁed.

Note

1. Stated figures are maximum values encountered at any driving level between the specified value of PEP and are

referred to the according level of either the equal amplified tones. Related to the according peak envelope power

these figures should be decreased by 6 dB.

Ruggedness in class-AB operation

The BLF177 is capable of withstanding a load mismatch corresponding to VSWR = 50 through all phases under the

following conditions: f = 28 MHz; VDS = 50 V at rated output power.

MODE OF

OPERATION

(MHz)

VDS

(V)

IDQ

(A)

(W)

(dB)

ηD

(%)

(dB)

(note 1)

(dB)

(note 1)

SSB, class-AB

0.7

20 to 150

(PEP)

>20

typ. 35

>35

typ. 40

<−30

typ.

−35

<−30

typ.

−38

Fig.9

Power gain as a function of load power;

typical values.

Class-AB operation; VDS = 50 V; IDQ = 0.7 A;

RGS =5 Ω; f1 = 28.000 MHz; f2 = 28.001 MHz.

handbook, halfpage

100

200

MGP096

(dB)

PL (W) PEP

Fig.10 Two tone efficiency as a function of load

power; typical values.

handbook, halfpage

100

200

MGP094

ηD

(%)

PL (W) PEP

Class-AB operation; VDS = 50 V; IDQ = 0.7 A;

RGS =5 Ω; f1 = 28.000 MHz; f2 = 28.001 MHz.

BLF177 Datasheet(PDF) 6 Page - Quanzhou Jinmei Electronic Co.,Ltd.

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