PJS6833 datasheet(1/6 Pages) PANJIT

No. de pieza	PJS6833

Descripción Electrónicos	30V P-Channel Enhancement Mode MOSFET ??ESD Protected

PDF	6 Pages

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Fabricante Electrónico	PANJIT [Pan Jit International Inc.]

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PPJS6833

January 22,2015-REV.01

Page 1

30V P-Channel Enhancement Mode MOSFET

– ESD Protected

Voltage

-30 V

Current

-1.1A

SOT-23 6L

Unit: inch(mm)

Features

 RDS(ON) , VGS@-4,5V, ID@-1.1A<370m

Ω

 RDS(ON) , VGS@-2.5V, ID@-0.5A<540m

Ω

 RDS(ON) , VGS@-1.8V, ID@-0.1A<970m

Ω

 Advanced Trench Process Technology

 Specially Designed for Switch Load, PWM Application, etc.

 ESD Protected 2KV HBM

 Lead free in compliance with EU RoHS 2011/65/EU directive.

 Green molding compound as per IEC61249 Std.

(Halogen Free)

Mechanical Data

 Case: SOT-23 6L Package

 Terminals : Solderable per MIL-STD-750, Method 2026

 Approx. Weight: 0.0005 ounces, 0.0141 grams

 Marking: SG3

PARAMETER

SYMBOL

LIMIT

UNITS

Drain-Source Voltage

VDS

-30

V

Gate-Source Voltage

VGS

+8

V

Continuous Drain Current

ID

-1.1

A

Pulsed Drain Current

(Note 4)

IDM

-4.4

A

Power Dissipation

Ta=25

oC

PD

1.25

W

Derate above 25

oC

10

mW/

oC

Operating Junction and Storage Temperature Range

TJ,TSTG

-55~150

oC

Typical Thermal resistance

-

Junction to Ambient

(Note 3)

RθJA

100

oC/W

Maximum Ratings and Thermal Characteristics (TA=25

o

C unless otherwise noted)

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