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DTC115TG-AE3-R Datasheet(PDF) 2 Page - Unisonic Technologies

No. de pieza DTC115TG-AE3-R
Descripción Electrónicos  NPN DIGITAL TRANSISTOR
PDF  3 Pages
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Fabricante Electrónico  UTC [Unisonic Technologies]
Página de inicio  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

DTC115TG-AE3-R Datasheet(HTML) 2 Page - Unisonic Technologies

  DTC115TG-AE3-R Datasheet HTML 1Page - Unisonic Technologies DTC115TG-AE3-R Datasheet HTML 2Page - Unisonic Technologies DTC115TG-AE3-R Datasheet HTML 3Page - Unisonic Technologies  
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DTC115T
NPN SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
2 of 3
www.unisonic.com.tw
QW-R206-063.C
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless others specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-base voltage
VCBO
50
V
Collector-emitter voltage
VCEO
50
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
100
mA
Collector Power dissipation
PC
200
mW
Junction temperature
TJ
150
°C
Storage temperature
TSTG
-55 ~ +150
°C
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL SPECIFICATIONS (TA=25°C, unless others specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNIT
Collector-Base Breakdown Voltage
BVCBO
IC=50μA
50
V
Collector-Emitter Breakdown Voltage
BVCEO
IC=1mA
50
V
Emitter-Base Breakdown Voltage
BVEBO
IE=50μA
5
V
Collector Cutoff Current
ICBO
VCB=50V
0.5
μA
Emitter Cutoff Current
IEBO
VEB=4V
0.5
μA
Collector-Emitter Saturation Voltage
VCE(SAT)
IC=1mA, IB=0.1mA
0.3
V
DC Current transfer Ratio
hFE
VCE=5V, IC=1mA
100
250
600
Input Resistance
R1
70
100
130
KΩ
Transition Frequency
fT
VCE=10V, IE=-5mA, f=100MHz
250
MHZ
Note: Transition frequency of the device



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