UT2301G-AE2-R datasheet(4/5 Pages) UTC

No. de pieza	UT2301G-AE2-R

Descripción Electrónicos	P-CHANNEL ENHANCEMENT MODE POWER MOSFET

PDF	5 Pages

Scroll/Zoom	100%

Fabricante Electrónico	UTC [Unisonic Technologies]

Página de inicio	http://www.utc-ic.com

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4 / 5 page

UT2301

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

4 of 4

www.unisonic.com.tw

QW-R502-118.J



TYPICAL CHARACTERISTICS(Cont.)

D=0.5

0.2

0.1

0.02

0.05

Single Pulse

0.1

0.01

0.0001

0.001

0.01

0.1

Transient Thermal Impedance

Pulse Duration (sec)

-0.2

-0.5

Drain Current vs. Source to Drain Voltage

Source to Drain Voltage, VSD (V)

-0.8

-0.4

-0.6

-1.5

-0.3

-6

-2

-4

-5

Drain-Source On-State Resistance Characteristics

Drain to Source Voltage, VDS (V)

-1

-0.2

-0.1

-3

-0.4

VGS=-4.5V,

ID=-2.8A

VGS=-2.5V

ID=-2A

-2

-1

-0.5

-0.2

-50

Drain Current vs. Gate Threshold

Voltage

Gate Threshold Voltage, VTH (V)

-250

-100

-150

-200

-300

Drain Current vs. Drain-Source

Breakdown Voltage

-50

Drain-Source Breakdown Voltage, BVDSS(V)

-30

-250

-10

-100

-150

-200

-300

-20

-40

-350

-400

-0.4

-0.8

-0.6

-50

-500

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