 |
Motor de Búsqueda de Datasheet de Componentes Electrónicos |
|
|
Motor de Búsqueda de Datasheet de Componentes Electrónicos |
|
UT3419G-AE2-R Datasheet(PDF) 1 Page - Unisonic Technologies |
|
|
|||||||||||||||||||||||||||||
UT3419G-AE2-R Datasheet(HTML) 1 Page - Unisonic Technologies |
|
|
1 / 4 page  UNISONIC TECHNOLOGIES CO., LTD UT3419 Power MOSFET www.unisonic.com.tw 1 of 4 Copyright © 2014 Unisonic Technologies Co., Ltd QW-R502-391.F 20V, 3.5A P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DESCRIPTION The UTC UT3419 is a P-channel enhancement MOSFET providing designers with excellent RDS(ON), low gate charge. The gate voltage is as low as 2.5V. The UTC UT3419 can be applied in PWM applications or used as a load switch. FEATURES * RDS(ON) < 75mΩ (VGS = -10V) RDS(ON) < 95mΩ (VGS = -4.5V) RDS(ON) < 145mΩ (VGS = -2.5V) SYMBOL ORDERING INFORMATION Ordering Number Package Pin Assignment Packing 1 2 3 UT3419G-AE2-R SOT-23-3 S G D Tape Reel UT3419G-AE3-R SOT-23 S G D Tape Reel Note: Pin Assignment: S: Source G: Gate D: Drain MARKING 34VG |
Número de pieza similar - UT3419G-AE2-R |
|
Descripción similar - UT3419G-AE2-R |
|
|
|
Enlace URL |
| ¿ALLDATASHEET es útil para Ud.? [ DONATE ] |
Todo acerca de Alldatasheet | Publicidad | Contáctenos | Política de Privacidad | Enlace a la hoja de datos | Intercambio de Enlaces | Lista de Fabricantes All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
Mexican ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
