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TC429 Datasheet(PDF) 2 Page - Microchip Technology

No. de pieza TC429
Descripción Electrónicos  6A Single High-Speed, CMOS Power MOSFET Driver
PDF  14 Pages
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Fabricante Electrónico  MICROCHIP [Microchip Technology]
Página de inicio  http://www.microchip.com
Logo MICROCHIP - Microchip Technology

TC429 Datasheet(HTML) 2 Page - Microchip Technology

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TC429
DS21416B-page 2
 2002 Microchip Technology Inc.
1.0
ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings*
Supply Voltage .....................................................+20V
Input Voltage, Any Terminal
...................................VDD + 0.3V to GND – 0.3V
Power Dissipation (TA ≤ 70°C)
PDIP .........................................................730mW
CERDIP....................................................800mW
Derating Factor
PDIP .................................5.6mW/°C Above 36°C
CERDIP................................................6.4mW/°C
Operating Temperature Range
C Version......................................... 0°C to +70°C
E Version ...................................... -40°C to +85°C
M Version ...................................-55°C to +125°C
Storage Temperature Range ..............-65°C to +150°C
*Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. These
are stress ratings only and functional operation of the device
at these or any other conditions above those indicated in the
operation sections of the specifications is not implied.
Exposure to Absolute Maximum Rating conditions for
extended periods may affect device reliability.
TC429 ELECTRICAL SPECIFICATIONS
Electrical Characteristics: TA = +25°C with 7V ≤ VDD ≤ 18V, unless otherwise noted.
Symbol
Parameter
Min
Typ
Max
Units
Test Conditions
Input
VIH
Logic 1, High Input Voltage
2.4
1.8
V
VIL
Logic 0, Low Input Voltage
1.3
0.8
V
IIN
Input Current
-10
10
µA0V ≤ VIN ≤ VDD
Output
VOH
High Output Voltage
VDD – 0.025
——
V
VOL
Low Output Voltage
——
0.025
V
RO
Output Resistance
1.8
2.5
VIN = 0.8V,
IOUT = 10mA, VDD = 18V
1.5
2.5
VIN = 2.4V,
IOUT = 10mA, VDD = 18V
IPK
Peak Output Current
6
AVDD = 18V (Figure 3-4)
Switching Time (Note 1)
tR
Rise Time
23
35
nsec
Figure 3-1, CL = 2500pF
tF
Fall Time
25
35
nsec
Figure 3-1, CL = 2500pF
tD1
Delay Time
53
75
nsec
Figure 3-1
tD2
Delay Time
60
75
nsec
Figure 3-1
Power Supply
IS
Power Supply Current
3.5
0.3
5
0.5
mA
VIN = 3V
VIN = 0V
Note
1:
Switching times ensured by design.



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