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UT75N03L-TN3-R Datasheet(PDF) 2 Page - Unisonic Technologies

No. de pieza UT75N03L-TN3-R
Descripción Electrónicos  N-CHANNEL JUNCTIN SILICON FET
PDF  3 Pages
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Fabricante Electrónico  UTC [Unisonic Technologies]
Página de inicio  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

UT75N03L-TN3-R Datasheet(HTML) 2 Page - Unisonic Technologies

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UT75N03
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 3
www.unisonic.com.tw
QW-R502-327.E
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
30
V
Gate-Source Voltage
VGSS
±20
V
Continuous Drain Current
ID
75
A
Pulsed Drain Current (Note 2)
IDM
225
A
Single Pulsed Avalanche Current (Note 3)
IAS
100
A
Single Pulsed Avalanche Energy (Note 3)
EAS
228
mJ
TO-220
75
Power Dissipation (TC = 25°С)
TO-251/ TO-252
PD
89
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: 1.
2.
3.
Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
Pulse width limited by TJ(MAX)
L=20μH, IAS=100A, VDD=24V, RG=25Ω, Starting TJ=25°С
THERMAL RESISTANCES CHARACTERISTICS
PARAMETER
SYMBOL
RATINGS
UNIT
TO-220
62.5
Junction to Ambient
TO-251/ TO-252
θJA
110
°C/W
TO-220
2.0
Junction to Case
TO-251/ TO-252
θJC
1.4
°C/W
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V, ID=250µA
30
V
Drain-Source Leakage Current
IDSS
VDS=30V, VGS=0V
1
µA
Forward
VGS=20V, VDS=0V
100
nA
Gate-Source Leakage Current
Reverse
IGSS
VGS=-20V, VDS=0V
-100
nA
ON CHARACTERISTICS
(Note)
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250µA
1
3
V
VGS=10V, ID=30A
5
7
mΩ
Static Drain-Source On-Resistance
RDS(ON)
VGS=4.5V, ID=20A
7
10
mΩ
DYNAMIC PARAMETERS
Input Capacitance
CISS
3298
pF
Output Capacitance
COSS
1400
pF
Reverse Transfer Capacitance
CRSS
VDS=15V, VGS=0V, f=1.0MHz
287
pF
SWITCHING PARAMETERS
Turn-ON Delay Time
tD(ON)
20
38
ns
Turn-ON Rise Time
tR
12
23
ns
Turn-OFF Delay Time
tD(OFF)
113
198
ns
Turn-OFF Fall-Time
tF
VDD=15V, ID=60A, VGS=10V,
RGEN=6Ω
40
78
ns
Total Gate Charge
QG
48
55
nC
Gate-Source Charge
QGS
10
nC
Gate-Drain Charge
QGD
VDS=15V, VGS=10V, ID=75A
27
nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Diode Forward Voltage(Note)
VSD
VGS=0V, IS=75A
1.5
V
Maximum Body-Diode Continuous Current
IS
75
A
Note: Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.



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