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UT108N03G-TN3-R Datasheet(PDF) 3 Page - Unisonic Technologies

No. de pieza UT108N03G-TN3-R
Descripción Electrónicos  N-CHANNEL JFET FOR ELECTRET CONDENSER MICROPHONE
PDF  4 Pages
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Fabricante Electrónico  UTC [Unisonic Technologies]
Página de inicio  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

UT108N03G-TN3-R Datasheet(HTML) 3 Page - Unisonic Technologies

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UT108N03
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
3 of 4
www.unisonic.com.tw
QW-R502-197.I
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V, ID=250µA
30
V
Drain-Source Leakage Current
IDSS
VDS=30V, VGS=0V
0.05
1
µA
Gate-Source Leakage Current
IGSS
VDS=0V, VGS=±20V
0.02
100
nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=1mA
1
3
V
Static Drain-Source On-Resistance
RDS(ON)
VGS=10V, ID=25A
4.2
5.3
mΩ
VGS=5V, ID=25A
6.6
mΩ
DYNAMIC PARAMETERS
Input Capacitance
CISS
VDS=25V, VGS=0V, f=1.0MHz
2900
pF
Output Capacitance
COSS
500
pF
Reverse Transfer Capacitance
CRSS
350
pF
SWITCHING PARAMETERS
Turn-ON Delay Time
tD(ON)
VDD=15V, RG=10Ω, VGS=5V,
RD=0.6Ω, ID =1A
60
ns
Turn-ON Rise Time
tR
100
ns
Turn-OFF Delay Time
tD(OFF)
650
ns
Turn-OFF Fall-Time
tF
300
ns
Total Gate Charge
QG
VDD =15V, VGS =5V, ID =40A
310
nC
Gate Source Charge
QGS
50
nC
Gate Drain Charge
QGD
90
nC
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD
IS=108A, VGS=0 V
1.25
V
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
(Note)
432
A
Body Diode Reverse Recovery Time
trr
IS=20A, dIS/dt=-100A/μs,
VGS=0V
34
ns
Body Diode Reverse Recovery Charge
QRR
27
nC
Note: tP≤10μs, pulsed



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