Motor de Búsqueda de Datasheet de Componentes Electrónicos
  Mexican  ▼
ALLDATASHEET.COM.MX

X  

Preview PDF HTML

UT4822G-S08-R Datasheet(PDF) 3 Page - Unisonic Technologies

No. de pieza UT4822G-S08-R
Descripción Electrónicos  DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET
PDF  6 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Fabricante Electrónico  UTC [Unisonic Technologies]
Página de inicio  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

UT4822G-S08-R Datasheet(HTML) 3 Page - Unisonic Technologies

  UT4822G-S08-R Datasheet HTML 1Page - Unisonic Technologies UT4822G-S08-R Datasheet HTML 2Page - Unisonic Technologies UT4822G-S08-R Datasheet HTML 3Page - Unisonic Technologies UT4822G-S08-R Datasheet HTML 4Page - Unisonic Technologies UT4822G-S08-R Datasheet HTML 5Page - Unisonic Technologies UT4822G-S08-R Datasheet HTML 6Page - Unisonic Technologies  
Zoom Inzoom in Zoom Outzoom out
 3 / 6 page
background image
UT4822
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
3 of 6
www.unisonic.com.tw
QW-R502-149.F
ABSOLUTE MAXIMUM RATINGS (TA = 25°С, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDS
30
V
Gate-Source Voltage
VGS
±20
V
Continuous Drain Current
ID
8.5
A
Pulsed Drain Current
IDM
40
A
Power Dissipation
PD
2
W
Junction Temperature
TJ
+150
°С
Storage Temperature
TSTG
-55 ~ +150
°С
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by TJ(MAX)
THERMAL DATA
PARAMETER
SYMBOL
MIN
TYP
MAX
UNIT
Junction to Ambient
θJA
74
110
°С/W
ELECTRICAL CHARACTERISTICS (TA =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V, ID=250uA
30
V
Drain-Source Leakage Current
IDSS
VDS=24V, VGS=0V
1
uA
Gate-Source Leakage Current
IGSS
VDS=0V, VGS=±20V
±100
nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250uA
1
1.8
3
V
VGS=10V, ID=8.5A
13.4
16
mΩ
Drain-Source On-State Resistance
RDS(ON)
VGS=4.5V, ID=6A
21
26
mΩ
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
1040 1250
pF
Output Capacitance
COSS
180
pF
Reverse Transfer Capacitance
CRSS
VGS=0V,VDS=15V,f=1.0MHz
110
pF
SWITCHING CHARACTERISTICS
Total Gate Charge
QG
19.2
23
nC
Gate-Source Charge
QGS
2.6
nC
Gate-Drain Charge
QGD
VDS=15V, VGS=10V, ID=8.5A
4.2
nC
Turn-ON Delay Time
tD(ON)
5.2
7.5
ns
Turn-ON Rise Time
tR
4.4
6.5
ns
Turn-OFF Delay Time
tD(OFF)
17.3
25
ns
Turn-OFF Fall Time
tF
VDD=15V, VGS=10V, RG=3Ω,
RL =1.8Ω
3.3
5
ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD
IS=1A, VGS=0V
0.76
1
V
Maximum Continuous Drain-Source Diode
Forward Current
IS
3
A
Reverse Recovery Time
tRR
IF = 8.5A, dIF /dt = 100 A/μs
16.7
21
ns
Reverse Recovery Charge
QRR
6.7
10
nC



Html Pages

1 2 3 4 5 6


Datasheet Descarga

Go To PDF Page


Enlace URL



¿ALLDATASHEET es útil para Ud.?  [ DONATE ] 

Todo acerca de Alldatasheet   |   Publicidad   |   Contáctenos   |   Política de Privacidad   |   Enlace a la hoja de datos    |   Intercambio de Enlaces   |   Lista de Fabricantes
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com