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UTT18P10G-TN3-R Datasheet(PDF) 2 Page - Unisonic Technologies

No. de pieza UTT18P10G-TN3-R
Descripción Electrónicos  P-CHANNEL POWER MOSFET
PDF  5 Pages
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Fabricante Electrónico  UTC [Unisonic Technologies]
Página de inicio  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

UTT18P10G-TN3-R Datasheet(HTML) 2 Page - Unisonic Technologies

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UTT18P10
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 5
www.unisonic.com.tw
QW-R502-619.E
ABSOLUTE MAXIMUM RATINGS (TJ=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
-100
V
Gate-Source Voltage
VGSS
±20
V
Drain Current
Continuous, VGSS@-10V
TC=25°C
ID
-18
A
Pulsed (Note 2)
IDM
-72
A
Avalanche Energy
Single Pulsed (Note 3)
EAS
40
mJ
Power Dissipation (TC=25°C)
TO-252
PD
150
W
TO-220
140
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive rating; pulse width limited by max. junction temperature
3. VDD=-50V, starting TJ=25°C, L=1mH, RG=25Ω, IAS=-9A. (See Figure 2a, 2b)
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Case
TO-252
θJC
1.0
°C/W
TO-220
1.1
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
ID=-250µA, VGS=0V
-100
V
Drain-Source Leakage Current
IDSS
VDS=-100V, VGS=0V,
-1
µA
Gate- Source Leakage Current
Forward
IGSS
VGS=+20V
+100 nA
Reverse
VGS=-20V
-100
nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=-250µA
-1.5
-2.5
V
Static Drain-Source On-State Resistance
RDS(ON)
VGS=-10V, ID=-18A (Note 2)
0.20
Ω
DYNAMIC PARAMETERS
Input Capacitance
CISS
VDS=-25V, VGS=0V, f=1.0MHz
1400
pF
Output Capacitance
COSS
590
pF
Reverse Transfer Capacitance
CRSS
140
pF
SWITCHING PARAMETERS
Total Gate Charge
QG
VDS=-80V, VGS=-10V, ID=-18A,
See Fig 3 (Note 2)
61
nC
Gate to Source Charge
QGS
14
nC
Gate to Drain ("Miller") Charge
QGD
29
nC
Turn-ON Delay Time
tD(ON)
VDD=-50V, ID=-18A, RG=9.1Ω,
RD = 2.4Ω, See Fig. 1(Note 2)
16
ns
Rise Time
tR
73
ns
Turn-OFF Delay Time
tD(OFF)
34
ns
Fall-Time
tF
57
ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
-18
A
Maximum Body-Diode Pulsed Current
(Note 1)
ISM
-72
A
Drain-Source Diode Forward Voltage
VSD
TJ=25°C, IS=-18A, VGS=0V
(Note 2)
-5.0
V
Notes: 1. Repetitive rating; pulse width limited by max. junction temperature.
2. Pulse width ≤ 300µs; duty cycle ≤ 2%.



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