UTT18P06G-TN3-R datasheet(3/4 Pages) UTC

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UTT18P06

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 4

www.unisonic.com.tw

QW-R502-713. D



ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS

ID=-250µA, VGS=0V

-60

Drain-Source Leakage Current

IDSS

VDS=-60V, VGS=0V

-1

µA

Gate-Source Leakage Current

Forward

IGSS

VGS=+20V, VDS=0V

+100

Reverse

VGS=-20V, VDS=0V

-100

ON CHARACTERISTICS

Gate Threshold Voltage

VGS(TH)

VDS=VGS, ID=-250µA

-1

-3

Static Drain-Source On-State Resistance

RDS(ON)

VGS=-10V, ID=-18.3A (Note 1)

0.055 0.070

Ω

On State Drain Current (Note 1)

ID(ON)

VGS=-10V, VDS=-5V

-30

DYNAMIC PARAMETERS

(Note 2)

Input Capacitance

CISS

VGS=0V, VDS=-25V, f=1.0MHz

(Note 2)

840

1310

Output Capacitance

COSS

Reverse Transfer Capacitance

CRSS

SWITCHING PARAMETERS

Total Gate Charge

VGS=-10V, VDS=-50V,

ID=-1.3A, IG=100μA (Note 3)

Gate to Source Charge

QGS

Gate to Drain Charge

QGD

7.0

Turn-ON Delay Time

tD(ON)

VDD=-30V, ID=-0.5A, RG=2.5Ω

(Note 3)

Rise Time

Turn-OFF Delay Time

tD(OFF)

300

Fall-Time

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

(TC=25°C) (Note 2)

Maximum Body-Diode Continuous Current

-18.3

Maximum Body-Diode Pulsed Current

ISM

-73.2

Drain-Source Diode Forward Voltage

VSD

IF=-18.3A, VGS=0V (Note 1)

-1.0

-1.5

Body Diode Reverse Recovery Time

trr

IF=-18.3A, dIF/dt=100A/µs

Notes: 1. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %

2. Guaranteed by design, not subject to production testing

3. Independent of operating temperature

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