UT3458G-AG6-R datasheet(3/4 Pages) UTC

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UT3458

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 4

www.unisonic.com.tw

QW-R502-578.D



ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS

ID=250µA, VGS=0V

Drain-Source Leakage Current

IDSS

VDS=60V, VGS=0V

µA

VDS=60V, VGS=0V, TJ=70°C

µA

Gate- Source Leakage Current

Forward

IGSS

VGS=+20V, VDS=0V

+100 nA

Reverse

VGS=-20V, VDS=0V

-100

ON CHARACTERISTICS

Gate Threshold Voltage

VGS(TH)

VDS=VGS, ID=250µA

1.5

Static Drain-Source On-State Resistance

RDS(ON)

VGS=10V, ID=3.2A

0.082 0.1

Ω

VGS=4.5V, ID=2.8A

0.105 0.128 Ω

On State Drain Current

ID(ON)

VGS=10V, VDS=5V

SWITCHING PARAMETERS

Input Capacitance

CISS

VDS =30 V, VGS = 0V, f = 1MHz

350

Output Capacitance

COSS

Reverse Transfer Capacitance

CRSS

Total Gate Charge

VDS=10V, VDS=48V, ID=3.2A

7.1

VDS=4.5V, VDS=48V, ID=3.2A

3.5

5.5

Gate to Source Charge

QGS

VDS=4.5V, VDS=48V, ID=3.2A

1.1

Gate to Drain Charge

QGD

0.95

Turn-ON Delay Time

tD(ON)

VDD=30V, ID≈2.5A, RL=12Ω,

VGEN=4.5V, RG=1Ω(Note 1, 2)

Rise Time

Turn-OFF Delay Time

tD(OFF)

Fall Time

Turn-ON Delay Time

tD(ON)

VDD=30V, ID≈2.5A, RL=12Ω,

VGEN=10V, RG=2.5Ω(Note 1, 2)

Rise Time

Turn-OFF Delay Time

tD(OFF)

Fall Time

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Maximum Body-Diode Continuous Current

2.9

Maximum Body-Diode Pulsed Current

ISM

Drain-Source Diode Forward Voltage

VSD

IS=2.5A, VGS=0V

0.8

1.2

Body Diode Reverse Recovery Time

tRR

IF=2.5A, di/dt=100A/µs (Note 1)

Notes: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%

2. Guaranteed by design, not subject to production testing

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