2N60L-TND-R datasheet(3/7 Pages) UTC

3 / 7 page

2N60-C

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 7

www.unisonic.com.tw

QW-R502-A46.G



ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

VDSS

600

Gate-Source Voltage

VGSS

±30

Avalanche Current (Note 2)

IAR

2.0

Continuous

2.0

Drain Current

Pulsed (Note 2)

IDM

8.0

Single Pulsed (Note 3)

EAS

140

Avalanche Energy

Repetitive (Note 2)

EAR

4.5

Peak Diode Recovery dv/dt (Note 4)

dv/dt

3.7

V/ns

TO-220

TO-220F/TO-220F1

TO-220F3

TO-220F2

Power Dissipation

TO-251/TO-251S

TO-251S2/TO-251S4

TO-252/TO-252D

Junction Temperature

+150

°С

Operating Temperature

TOPR

-55 ~ +150

°С

Storage Temperature

TSTG

-55 ~ +150

°С

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating : Pulse width limited by TJ

3. L=70mH, IAS=2.0A, VDD=50V, RG=25 Ω, Starting TJ = 25°C

4. ISD≤2A, di/dt≤200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C



THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

TO-220F/TO-220F1/

TO-220F2/TO-220F3

62.5

Junction to Ambient

TO-251/TO-251S

TO-251S2/TO-251S4

TO-252/TO-252D

θJA

100

°С/W

TO-220F/TO-220F1

TO-220F3

5.5

TO-220F2

5.43

Junction to Case

TO-251/TO-251S

TO-251S2/TO-251S4

TO-252/TO-252D

θJC

2.87

°С/W

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