5N70KG-TND-R datasheet(3/7 Pages) UTC

3 / 7 page

5N70K-MT

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 7

www.unisonic.com.tw

QW-R502-B33.D



ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

VDSS

700

Gate-Source Voltage

VGSS

±30

Avalanche Current (Note 2)

IAR

Continuous Drain Current

Pulsed Drain Current (Note 2)

IDM

Single Pulsed (Note 3)

EAS

150

Avalanche Energy

Repetitive (Note 2)

EAR

Peak Diode Recovery dv/dt (Note 4)

dv/dt

4.5

V/ns

TO-220

108

TO-220F/TO-220F1

TO-220F3

TO-220F2

Power Dissipation

TO-251/TO-251S

TO-251S2/TO-251S4

TO-252/TO-252D

Junction Temperature

+150

°C

Operation Temperature

TOPR

-55~+150

°C

Storage Temperature

TSTG

-55~+150

°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Pulse width limited by TJ(MAX)

3. L=12mH, IAS=5A, VDD=50V, RG=25 Ω, Starting TJ = 25°C

4. ISD≤5A, di/dt≤200A/μs, VDD≤ BVDSS, Starting TJ = 25°C



THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

TO-220/TO-220F

TO-220F1/TO-220F2

TO-220F3

62.5

°C/W

Junction to Ambient

TO-251/TO-251S

TO-251S2/TO-251S4

TO-252/TO-252D

θJA

110

°C/W

TO-220

1.15

°C/W

TO-220F/TO-220F1

TO-220F3

3.47

°C/W

TO-220F2

3.28

°C/W

Junction to Case

TO-251/TO-251S

TO-251S2/TO-251S4

TO-252/TO-252D

θJC

2.30

°C/W

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