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UD4606QG-S08-R Datasheet(PDF) 3 Page - Unisonic Technologies |
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UD4606QG-S08-R Datasheet(HTML) 3 Page - Unisonic Technologies |
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3 / 10 page ![]() UD4606Q Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 3 of 10 www.unisonic.com.tw QW-R211-021.B ABSOLUTE MAXIMUM RATINGS (TA = 25°С, unless otherwise specified) N-CHANNEL PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current (Note2) ID 6.9 A Pulsed Drain Current (Note2) IDM 30 A Power Dissipation PD 2 W Junction Temperature TJ +150 °С Storage Temperature TSTG -55 ~ +150 °С P-CHANNEL PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS -30 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current (Note 2) ID -6 A Pulsed Drain Current (Note 2) IDM -30 A Power Dissipation PD 2 W Junction Temperature TJ +150 °С Storage Temperature TSTG -55 ~ +150 °С Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Surface Mounted on 1in 2 pad area, t≤10sec THERMAL DATA PARAMETER SYMBOL MIN TYP MAX UNIT Junction to Ambient (Note) θJA 67 80 °С/W Note: Surface Mounted on 1in 2 pad area, t≤10sec |
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