2N5109 datasheet(1/5 Pages) MICROSEMI

No. de pieza	2N5109

Descripción Electrónicos	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

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Fabricante Electrónico	MICROSEMI [Microsemi Corporation]

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MSC1304.PDF 10-25-99

2N5109

DESCRIPTION:

Silicon NPN transistor, designed for VHF and UHF equipment. Applications include amplifier; pre-driver, driver, and

output stages. Also suitable for oscillator and frequency-multiplier functions.

ABSOLUTE MAXIMUM RATINGS (Tcase = 25

°C)

Symbol

Parameter

Value

Unit

VCEO

Collector-Emitter Voltage

20

Vdc

VCBO

Collector-Base Voltage

40

Vdc

VEBO

Emitter-Base Voltage

3.0

Vdc

IC

Collector Current

400

mA

Thermal Data

P

D

Total Device Dissipation @ TC = 75ºC (1)

Derate above 25ºC

2.5

20

Watts

mW/ ºC

Note 1. Total Device dissipation at TA = 25ºC is 1 Watt.

1. Emitter

2. Base

3. Collector

TO-39

Features

• Silicon NPN, To-39 packaged VHF/UHF Transistor

• 1.2 GHz Current-Gain Bandwidth Product @ 50mA

• Maximum Unilateral Gain = 12dB (typ) @ 200 MHz

RF & MICROWAVE DISCRETE

LOW POWER TRANSISTORS

140 COMMERCE DRIVE

MONTGOMERYVILLE, PA

18936-1013

PHONE: (215) 631-9840

FAX: (215) 631-9855

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