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ACE9030 Datasheet(PDF) 5 Page - Mitel Networks Corporation

No. de pieza ACE9030
Descripción Electrónicos  Radio Interface and Twin Synthesiser
PDF  39 Pages
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Fabricante Electrónico  MITEL [Mitel Networks Corporation]
Página de inicio  http://www.mitel.com
Logo MITEL - Mitel Networks Corporation

ACE9030 Datasheet(HTML) 5 Page - Mitel Networks Corporation

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ACE9030
5
Parameter
Min.
Typ.
Max.
Unit
Conditions
Power supply
Supply current, Radio Interface:
Sleep mode
2.3
2·7
mA
XO, OSC8 on
Fully operating (excluding I
DDX)
7
mA
(see Note 1)
Supply current, Synthesisers: V
DD=5V
f
REF
= 10 MHz
Main and Auxiliary ON
5
mA
f
MAIN = 10 MHz
Main ON and Auxiliary in Standby
3.7
mA
f
AUX
= 10 MHz
Main in Standby and Auxiliary ON
3
mA
(see Note 2)
Main and Auxiliary in Standby, with Bandgap off
100
µA
Supply current, Synthesisers:
f
REF
= 15 MHz
Main and Auxiliary ON
3
mA
f
MAIN = 16 MHz
Main ON and Auxiliary in Standby
2
mA
f
AUX
= 90 MHz
Main in Standby and Auxiliary ON
2
mA
(see Note 2)
Main and Auxiliary in Standby
100
µA
Input and output signals
Logic input HIGH (LATCHC, LATCHB, DATA,
CL, and TEST)
0·7 x V
DD
V
DD + 0·3
V
Logic input LOW (LATCHC, LATCHB, DATA,
CL, and TEST)
– 0·3
+ 0·8
V
Input capacitance (signal pins)
10
pF
Pin voltage
Input leakage (signal pins)
1
µAV
SS to VDD
Logic output HIGH (RXCD, DATA, AFCOUT,
V
DD – 0·5
V
TEST and DOUT2, 3 and 4)
External load:
Logic output LOW (RXCD, DATA, AFCOUT,
0·4
V
20 k
Ω & 30 pF
TEST and DOUT2, 3 and 4)
Output ON level, DOUT0 and DOUT1
V
DDX – 0·2
V
I
OH = 20 mA.
Output HIGH level, DOUT5, 6 and 7
2·3
2·9
V
I
OH = 80 µA
Output LOW level, DOUT5, 6 and 7
0·3
V
I
OL = 0.2 µA
Trimmed output level ON, DOUT8
3·35
3·55
V
I
OH = 135 to 400 µA.
Level difference, DOUT8 ON – ADC reference
– 5
+ 15
mV
Output level OFF, DOUT8
0.4
V
MODMP, MODMN output HIGH
V
DD/2 + 0·35
V
DD/2 + 1·0
V
I
OH = 10 µA
MODMP, MODMN output LOW
V
DD/2 – 1·0
V
DD/2 – 0·35
V
I
OL = – 10 µA
Input Schmitt Hysteresis, pins CL, LATCHB,
0·3
V
LATCHC, DATA.
Analog circuits bias resistor on I
REF
68
k
V
DD @ 3·75 V
100
k
V
DD @ 4·85 V
ELECTRICAL CHARACTERISTICS
These characteristics apply over these ranges of conditions (unless otherwise stated):
T
AMB = – 40 °C to + 85 °C, VDD
= + 3·6 to + 5·0 V, GND ref. = V
SS
D.C. Characteristics
Notes
1. The sleep current is specified with the crystal oscillator (XO) and the OSC8 oscillator and PLL running as these are normally needed to provide
the clock to the system controller.
2. The terms f
REF, fMAIN, and fAUX refer to the frequencies of the Reference inputs (Crystal oscillator, pins CIN1 and CIN2), the Main synthesiser
inputs (pins FIM and FIMB) and the Auxiliary synthesiser inputs (pins FIA and FIAB) respectively.



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