ACE5830

DFNWB2X2-6L

N-Channel

MOSFETS

VER 1.1

2

Ordering information

ACE5830 XX + H

Mosfet

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

STATIC PARAMETERS

Drain-source breakdown voltage

30

V

Zero gate voltage drain current

1

µA

Gate-body leakage current

±10

µA

0.6

1

V

42

mΩ

44

mΩ

50

mΩ

15

S

1

V

DYNAMIC PARAMETERS(note2)

Input Capacitance

245

pF

Output Capacitance

35

pF

Reverse Transfer Capacitance

20

pF

SWITCHING PARAMETERS (note 2)

Turn-on delay time

2

ns

Turn-on rise time

3.5

ns

Turn-off delay time

22

ns

Turn-off fall time

3.5

ns

Total Gate Charge

10

nC

Gate-Source Charge

0.5

nC

Gate-Drain Charge

1

nC

Notes: 1. Pulse Te

st : Pulse width≤300μs, duty cycle≤0.5%.

2. Guaranteed by design, not subject to production testing.

LN : DFNWB2*2-6L

Pb - free

Halogen - free