NVMFS5C450N

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2

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

40

V

Drain−to−Source Breakdown Voltage

Temperature Coefficient

20

mV/

°C

Zero Gate Voltage Drain Current

10

mA

100

Gate−to−Source Leakage Current

100

nA

ON CHARACTERISTICS (Note 4)

Gate Threshold Voltage

2.5

3.5

V

Threshold Temperature Coefficient

−9.1

mV/

°C

Drain−to−Source On Resistance

2.7

3.3

m

W

Forward Transconductance

93

S

CHARGES, CAPACITANCES & GATE RESISTANCE

Input Capacitance

1600

pF

Output Capacitance

830

Reverse Transfer Capacitance

28

Total Gate Charge

23

nC

Threshold Gate Charge

5.1

Gate−to−Source Charge

9.0

Gate−to−Drain Charge

3.5

Plateau Voltage

5.3

V

SWITCHING CHARACTERISTICS (Note 5)

Turn−On Delay Time

10

ns

Rise Time

47

Turn−Off Delay Time

19

Fall Time

3.0

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

0.9

1.2

V

0.78

Reverse Recovery Time

37

ns

Charge Time

18

Discharge Time

19

Reverse Recovery Charge

23

nC

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

4. Pulse Test: pulse width

v 300 ms, duty cycle v 2%.

5. Switching characteristics are independent of operating junction temperatures.