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PAM8124 Datasheet(PDF) 3 Page - Diodes Incorporated

No. de pieza PAM8124
Descripción Electrónicos  HIGH POWER AUDIO
PDF  15 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Fabricante Electrónico  DIODES [Diodes Incorporated]
Página de inicio  http://www.diodes.com
Logo DIODES - Diodes Incorporated

PAM8124 Datasheet(HTML) 3 Page - Diodes Incorporated

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PAM8124
Document number: DS36627 Rev. 1 - 2
3 of 15
www.diodes.com
October 2013
© Diodes Incorporated
PAM8124
A Product Line of
Diodes Incorporated
Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Parameter
Rating
Unit
Supply Voltage (VCC)
28
V
Logic Input Voltage (SDN, MUTE, GAIN0, GAIN1, SE_BTL)
-0.3 to VCC +0.3
V
Analog Input Voltage (LIN, RIN)
-0.3 to +5.5
V
Storage Temperature
-65 to +150
°C
Maximum Junction Temperature
150
°C
Junction to ambient thermal resistance
40
°C/W
Recommended Operating Conditions (@TA = +25°C, unless otherwise specified.)
Symbol
Parameter
Min
Max
Unit
VCC
Supply Voltage
10
26
V
TA
Operating Ambient Temperature Range
-40
+85
°C
TJ
Junction Temperature Range
-40
+125
°C
Electrical Characteristics (@TA = +25°C, VCC = 24V, Gain = 20dB, RL = 8Ω unless otherwise specified.)
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
|VOS|
Class-D output offset voltage(measured
differently)
Vi = 0V, AV = 36dB
20
100
mV
ICC(q)
Quiescent supply current
SDN = 2.5V, MUTE = 0V, No Load
25
40
mA
ICC(MUTE)
Quiescent supply current in mute mode
MUTE = 2.5V, No load
25
40
mA
ICC(SDN)
Quiescent current in shutdown mode
SDN = 0.8V, No load
30
60
µA
RDS(ON)
Drain-source on-state resistance
IO = 0.5A
150
mΩ
G
Gain
GAIN1 = 0.8V, GAIN0 = 0.8V
18
20
22
dB
GAIN1 = 0.8V, GAIN0 = 2.5V
24
26
28
GAIN1 = 2.5V, GAIN0 = 0.8V
30
32
34
GAIN1 = 2.5V, GAIN0 = 2.5V
34
36
38
Mute Attenuation
Vi = 1Vrms
-60
dB
PSRR
Power Supply Rejection Ratio
VRIPPLE = 200mVpp,
f = 1kHz,gain = 20dB
-52
dB
PO
Output Power at 1% THD+N
RL = 4Ω, f = 1kHz
14
W
RL = 8Ω, f = 1kHz
8
Output Power at 10% THD+N
RL = 4Ω, f = 1kHz
18
RL = 8Ω, f = 1kHz
10
THD+N
Total harmonic distortion + noise
RL =4Ω, f = 1kHz, Po = 10W
0.15
%
RL = 8Ω, f = 1kHz, Po = 5W
0.08
Vn
Output integrated noise floor
20Hz to 22kHz, A-weighted,
Gain = 20dB
200
µV
Cs
Crosstalk
PO = 1W, f = 1kHz, Gain = 20dB
-70
dB
SNR
Signal-to-noise ratio
THD+N<1%, f = 1kHz, Gain = 20dB
92
dB
OTP
Thermal trip point
160
°C
OTH
Thermal hysteresis
60
°C
fosc
Oscillator frequency
SE_BTL = 2.5V
250
300
350
kHz
SE_BTL = 0.8V
360



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