EM3596-RTR datasheet(14/59 Pages) SILABS

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EM359x

Rev 1.0

3.3. Environmental Characteristics

Table 3.3 lists the rated environmental characteristics of the EM359x.

3.4. DC Electrical Characteristics

Table 3.4 lists the DC electrical characteristics of the EM359x.

Table 3.3. Environmental Characteristics

Parameter

Test Condition

Min

Typ

Max

Unit

ESD (human body model)

On any pin

—

±2

ESD (charged device model)

Non-RF pins

—

±400

ESD (charged device model)

RF pins

—

±225

Table 3.4. DC Characteristics

Parameter

Test Condition

Min

Typ

Max

Unit

Regulator input voltage

(VDD_PADS)

2.1

—

3.6

Power supply range (VDD_MEM)

Regulator output or external input

1.7

1.8

1.9

Power supply range (VDD_CORE)

Regulator output

1.18

1.25

1.32

Deep Sleep Current

Quiescent current, internal oscilla-

tor disabled, 4 kB RAM retained

–40 °C, VDD_PADS=3.6 V

—

0.9

—

A

+25 °C, VDD_PADS=3.6 V

—

1.0

—

A

+85 °C, VDD_PADS=3.6 V

—

2.2

—

A

Quiescent current, including



internal RC oscillator, 4 kB RAM

retained

–40 °C, VDD_PADS=3.6 V

—

1.2

—

A

+25 °C, VDD_PADS=3.6 V

—

1.25

—

A

+85°C, VDD_PADS=3.6 V

—

2.5

—

A

Quiescent current, including

32.768 kHz oscillator, 4 kB RAM

retained

–40 °C, VDD_PADS=3.6 V

—

1.3

—

A

+25 °C, VDD_PADS=3.6 V

—

1.6

—

A

+85 °C, VDD_PADS=3.6 V

—

2.9

—

A

Quiescent current, including



internal RC oscillator and

32.768 kHz oscillator, 4 kB RAM

retained

–40 °C, VDD_PADS=3.6 V

—

1.6

—

A

+25 °C, VDD_PADS=3.6 V

—

1.9

—

A

+85 °C, VDD_PADS=3.6 V

—

3.2

—

A

Additional quiescent current per



4 kB block of RAM retained

–40 °C, VDD_PADS=3.6 V

—

0.007

—

A

+25 °C, VDD_PADS=3.6 V

—

0.067

—

A

+85 °C, VDD_PADS=3.6 V

—

0.76

—

A

Additional quiescent current when

retained RAM exceeds 32 kB

–40 °C, VDD_PADS=3.6 V

—

0.57

—

A

+25 °C, VDD_PADS=3.6 V

—

0.67

—

A

+85 °C, VDD_PADS=3.6 V

—

2.0

—

A

Simulated deep sleep (debug

mode) current

With no debugger activity

—

500

—

A

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