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BFS17P Datasheet(PDF) 1 Page - Infineon Technologies AG |
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BFS17P Datasheet(HTML) 1 Page - Infineon Technologies AG |
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1 / 5 page  BFS17P Jul-12-2001 1 NPN Silicon RF Transistor For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA 1 2 3 VPS05161 Type Marking Pin Configuration Package BFS17P MCs 1 = B 2 = E 3 = C SOT23 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCEO 15 V Collector-base voltage VCBO 25 Emitter-base voltage VEBO 2.5 Collector current IC 25 mA Peak collector current, f = 10 MHz ICM 50 Total power dissipation TS 55 °C 1) Ptot 280 mW Junction temperature Tj 150 °C Ambient temperature TA -65 ... 150 Storage temperature Tstg -65 ... 150 Thermal Resistance Junction - soldering point2) RthJS 340 K/W 1TS is measured on the collector lead at the soldering point to the pcb 2For calculation of RthJA please refer to Application Note Thermal Resistance |
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