BFS480

1

Jun-27-2001

NPN Silicon RF Transistor

For low noise, low-power amplifiersin mobile

communication systems (pager, cordless

telephone) at collector currents from 0.2 mA to 8 m

F = 1.5 dB at 900 MHz

Two (galvanic) internal isolated

Transistors in one package

VPS05604

6

3

1

5

4

2

EHA07196

6

54

3

2

1

C1

E2

B2

C2

E1

B1

TR1

TR2

ESD

: Electrostatic discharge sensitive device, observe handling precaution!

Type

Marking

Pin Configuration

Package

BFS480

REs

1=B

2=E

3=C

4=B

5=E

6=C

SOT363

Maximum Ratings

Parameter

Symbol

Value

Unit

Collector-emitter voltage

8

V

Collector-emitter voltage

10

Collector-base voltage

10

Emitter-base voltage

2

Collector current

10

mA

Base current

1.2

Total power dissipation

80

mW

Junction temperature

150

°C

Ambient temperature

-65 ... 150

Storage temperature

-65 ... 150

Thermal Resistance

470

K/W