USB5537B datasheet(65/79 Pages) MICROCHIP

65 / 79 page

 2012 - 2015 Microchip Technology Inc.

DS00001682C-page 65

USB5537B

6.4

DC Electrical Characteristics

Note 6-2

Output leakage is measured with the current pins in high impedance.

Note 6-3

See USB 2.0 Specification 1. for USB DC electrical characteristics.

TABLE 6-2:

DC ELECTRICAL CHARACTERISTICS

Parameter

Symbol

MIN

TYP

MAX

Units

Comments

IS Type Input Buffer

Low Input Level

VILI

0.8

TTL Levels

High Input Level

VIHI

2.0

Hysteresis (IS only)

VHYSI

420

I, IPU, IPD Type Input Buffer

Low Input Level

VILI

0.8

TTL Levels

High Input Level

VIHI

2.0

Pull Down

AV

IN = 0

Pull Up

AV

IN = VDD33

ICLK Input Buffer

Low Input Level

VILCK

0.3

High Input Level

VIHCK

0.8

Input Leakage

IIL

-10

+10

AV

IN = 0 to VDD33

Input Leakage

(All I and IS buffers)

Low Input Leakage

IIL

-10

+10

AV

IN = 0

High Input Leakage

IIH

-10

+10

AV

IN = VDD33

O12 Type Buffer

Low Output Level

VOL

0.4

IOL = 12 mA @

VDD33 = 3.3 V

High Output Level

VOH

VDD33

-0.4

VIOH = -12 mA @

VDD33 = 3.3 V

Output Leakage

IOL

-10

+10

AV

IN = 0 to VDD33

(Note 6-2)

I/O12, I/O12PU & I/O12PD

Type Buffer

Low Output Level

VOL

0.4

IOL = 12 mA @

VDD33 = 3.3 V

High Output Level

VOH

VDD33

-0.4

VIOH = -12 mA @

VDD33 = 3.3 V

Output Leakage

IOL

-10

+10

AV

IN = 0 to VDD33

(Note 6-2)

Pull Down

A

Pull Up

A

IO-U

(Note 6-3)

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