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STP33N60DM2 Datasheet(PDF) 3 Page - STMicroelectronics

No. de pieza STP33N60DM2
Descripción Electrónicos  N-channel 600 V, 0.110 Ω typ., 24 A MDmesh™ DM2 Power MOSFET in D²PAK, TO-220 and TO-247 packages
PDF  20 Pages
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP33N60DM2 Datasheet(HTML) 3 Page - STMicroelectronics

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STB33N60DM2, STP33N60DM2, STW33N60DM2
Electrical ratings
DocID026854 Rev 2
3/20
1
Electrical ratings
Table 2: Absolute maximum ratings
Symbol
Parameter
Value
Unit
VGS
Gate-source voltage
±25
V
ID
Drain current (continuous) at Tcase = 25 °C
24
A
Drain current (continuous) at Tcase = 100 °C
15.5
IDM(1)
Drain current (pulsed)
96
A
PTOT
Total dissipation at Tcase = 25 °C
190
W
dv/dt(2)
Peak diode recovery voltage slope
50
V/ns
dv/dt(3)
MOSFET dv/dt ruggedness
50
Tstg
Storage temperature
-55 to 150
°C
Tj
Operating junction temperature
Notes:
(1) Pulse width is limited by safe operating area.
(2) ISD ≤ 24 A, di/dt=900 A/μs; VDS peak < V(BR)DSS, VDD = 400 V.
(3) VDS ≤ 480 V.
Table 3: Thermal data
Symbol
Parameter
Value
Unit
D²PAK
TO-220
TO-247
Rthj-case
Thermal resistance junction-case
0.66
°C/W
Rthj-pcb
Thermal resistance junction-pcb(1)
30
Rthj-amb
Thermal resistance junction-ambient
62.5
50
Notes:
(1)When mounted on 1 inch² FR-4, 2 Oz copper board.
Table 4: Avalanche characteristics
Symbol
Parameter
Value
Unit
IAR
Avalanche current, repetitive or not repetitive (Pulse width limited by Tjmax)
5.5
A
EAS
Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V)
570
mJ



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