| Motor de Búsqueda de Datasheet de Componentes Electrónicos |
|
STL100N8F7 Datasheet(PDF) 5 Page - STMicroelectronics |
|
|
|||||||||||||||||||||||||||||
STL100N8F7 Datasheet(HTML) 5 Page - STMicroelectronics |
|
5 / 14 page ![]() STL100N8F7 Electrical characteristics DocID027058 Rev 3 5/14 Table 7: Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit VSD(1) Forward on voltage VGS = 0, ISD = 20 A - 1.2 V trr Reverse recovery time ISD = 20 A, di/dt = 100 A/µs VDD = 60 V (see Figure 15: "Test circuit for inductive load switching and diode recovery times" - 48.6 ns Qrr Reverse recovery charge - 58.6 nC IRRM Reverse recovery current - 2.4 A Notes: (1)Pulsed: pulse duration = 300 µs, duty cycle 1.5% |
|
|
Enlace URL |
| ¿ALLDATASHEET es útil para Ud.? [ DONATE ] |
Todo acerca de Alldatasheet | Publicidad | Contáctenos | Política de Privacidad | Enlace a la hoja de datos | Intercambio de Enlaces | Lista de Fabricantes All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |