MMBTA13 datasheet(1/4 Pages) INFINEON

No. de pieza	MMBTA13

Descripción Electrónicos	NPN Silicon Darlington Transistors

PDF	4 Pages

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Fabricante Electrónico	INFINEON [Infineon Technologies AG]

Página de inicio	http://www.infineon.com

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SMBTA13/ MMBTA13, SMBTA14/ MMBTA14

1

Feb-18-2002

NPN Silicon Darlington Transistors

High DC current gain

High collector current

Low collector-emitter saturation voltage

1

2

3

VPS05161

Type

Marking

Pin Configuration

Package

SMBTA13/ MMBTA13

SMBTA14/ MMBTA14

s1M

s1N

1 = B

2 = E

3 = C

SOT23

Maximum Ratings

Parameter

Symbol

Values

Unit

Collector-emitter voltage

VCES

30

V

Collector-base voltage

VCBO

30

Emitter-base voltage

VEBO

10

DC collector current

IC

300

mA

Peak collector current

ICM

500

mA

Base current

100

IB

Peak base current

IBM

200

Total power dissipation

, TS = 81 °C

Ptot

330

mW

Junction temperature

Tj

150

°C

Storage temperature

Tstg

-65 ... 150

Thermal Resistance

Junction - soldering point1)

RthJS

210

K/W

1For calculation of RthJA please refer to Application Note Thermal Resistance

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MMBTA13 Datasheet(PDF) 1 Page - Infineon Technologies AG

MMBTA13 Datasheet(HTML) 1 Page - Infineon Technologies AG

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